Title:
INDIUM NANOWIRE, OXIDE NANOWIRE, ELECTROCONDUCTIVE OXIDE NANOWIRE, AND PRODUCTION PROCESS THEREOF
Document Type and Number:
WIPO Patent Application WO/2007/055422
Kind Code:
A1
Abstract:
[PROBLEMS] To provide a process for producing an indium nanowire and an electroconductive
oxide nanowire, which are applicable, for example, to electroconductive fillers
and nanowiring of various transparent electroconductive films and are in the
form of a wire having an average thickness of not more than 500 nm and a ratio of the
average length to the average thickness (aspect ratio) of not less than 30, in
a simple and cost-effective manner, and an indium nanowire and an electroconductive
oxide nanowire produced by the process. [MEANS FOR SOLVING PROBLEMS] A process
for producing an indium nanowire, characterized in that particles composed
mainly of indium subhalide are disproportionately reacted in a nonaqueous solvent
to produce a nanowire composed mainly of metallic indium. The electroconductive
oxide nanowire can be produced by thermally oxidizing the above indium nanowire
further doped with a doping metal, or by doping an indium oxide nanowire, produced
from the indium nanowire, with an oxide of a doping metal.
Inventors:
YUKINOBU, Masaya (18-5, Nakakokubun 3-chome, Ichikawa-sh, Chiba 35, 2720835, JP)
Application Number:
JP2006/322917
Publication Date:
May 18, 2007
Filing Date:
November 10, 2006
Export Citation:
Assignee:
SUMITOMO METAL MINING CO., LTD. (11-3, Shimbashi 5-chome Minato-k, Tokyo 16, 1058716, JP)
住友金属鉱山株式会社 (〒16 東京都港区新橋５丁目１１番３号 Tokyo, 1058716, JP)
住友金属鉱山株式会社 (〒16 東京都港区新橋５丁目１１番３号 Tokyo, 1058716, JP)
International Classes:
B22F1/00; B22F9/30; B82B1/00; B82B3/00; H01B5/00; H01B13/00
Attorney, Agent or Firm:
OSHIDA, Yoshiteru et al. (Ginza Bldg, 3-12 Ginza 3-chom, Chuo-ku Tokyo 61, 1040061, JP)