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Title:
INDIUM NITRIDE PIEZOELECTRIC THIN FILM, METHOD FOR PRODUCING SAME AND PIEZOELECTRIC ELEMENT
Document Type and Number:
WIPO Patent Application WO/2016/136475
Kind Code:
A1
Abstract:
Provided is an indium nitride piezoelectric thin film which has excellent piezoelectric characteristics. An indium nitride piezoelectric thin film which contains samarium or lanthanum.

Inventors:
UMEDA KEIICHI (JP)
HONDA ATSUSHI (JP)
AIDA YASUHIRO (JP)
Application Number:
PCT/JP2016/053975
Publication Date:
September 01, 2016
Filing Date:
February 10, 2016
Export Citation:
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Assignee:
MURATA MANUFACTURING CO (JP)
International Classes:
H01L41/187; C23C14/06; C23C14/34; H01L41/113; H01L41/316; H03H9/17; H04R17/02
Domestic Patent References:
WO2011002028A12011-01-06
WO2014192265A12014-12-04
Foreign References:
JPH11116946A1999-04-27
JP2003342561A2003-12-03
JP2007299734A2007-11-15
Attorney, Agent or Firm:
MIYAZAKI & METSUGI (JP)
Patent business corporation Miyazaki and table-of-contents patent firm (JP)
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