Title:
INDIUM PHOSPHIDE SINGLE CRYSTAL AND INDIUM PHOSPHIDE SINGLE CRYSTAL SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2019/009306
Kind Code:
A1
Abstract:
Provided is an indium phosphide single crystal having an oxygen concentration of less than 1 × 1016 atoms·cm-3 and including a cylindrical straight body portion. The diameter of the straight body portion is 100-150 mm, or larger than 100 mm and 150 mm or smaller. Also provided is an indium phosphide single crystal substrate having an oxygen concentration of less than 1 × 1016 atoms·cm-3 and having a diameter of 100-150 mm, or larger than 100 mm and 150 mm or smaller.
Inventors:
YANAGISAWA TAKUYA (JP)
KONOIKE KAZUAKI (JP)
HASHIO KATSUSHI (JP)
KONOIKE KAZUAKI (JP)
HASHIO KATSUSHI (JP)
Application Number:
PCT/JP2018/025272
Publication Date:
January 10, 2019
Filing Date:
July 03, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/40
Domestic Patent References:
| WO2004106597A1 | 2004-12-09 |
Foreign References:
| JP2016519642A | 2016-07-07 | |||
| JPH01239089A | 1989-09-25 | |||
| JPH05132397A | 1993-05-28 | |||
| JPH0226887A | 1990-01-29 | |||
| JPS63107886A | 1988-05-12 | |||
| JP2002114600A | 2002-04-16 |
Other References:
See also references of EP 3502323A4
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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