Title:
INDIUM PHOSPHIDE SUBSTRATE, METHOD FOR MANUFACTURING INDIUM PHOSPHIDE SUBSTRATE, AND SEMICONDUCTOR EPITAXIAL WAFER
Document Type and Number:
WIPO Patent Application WO/2022/137727
Kind Code:
A1
Abstract:
Provided are an indium phosphide substrate, a method for manufacturing an indium phosphide substrate, and a semiconductor epitaxial wafer that make it possible to suppress cracking in an indium phosphide substrate caused by irregularities and processing damage in an edge part. The surface roughness of the entire edge-part surface of the indium phosphide substrate has a maximum height Sz of 2.1 μm or less, as measured by a laser microscope.
Inventors:
YAMAGISHI KODAI (JP)
OKA SHUNSUKE (JP)
SUZUKI KENJI (JP)
OKA SHUNSUKE (JP)
SUZUKI KENJI (JP)
Application Number:
PCT/JP2021/037238
Publication Date:
June 30, 2022
Filing Date:
October 07, 2021
Export Citation:
Assignee:
JX NIPPON MINING & METALS CORP (JP)
International Classes:
H01L21/20; H01L21/304
Foreign References:
| JP2001135557A | 2001-05-18 | |||
| JP2020157426A | 2020-10-01 | |||
| JP2008109125A | 2008-05-08 | |||
| JP2019219495A | 2019-12-26 | |||
| JPH11204493A | 1999-07-30 | |||
| JP2019046859A | 2019-03-22 | |||
| JP2012174935A | 2012-09-10 | |||
| JPH041418B2 | 1992-01-13 |
Attorney, Agent or Firm:
AXIS PATENT INTERNATIONAL (JP)
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