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Patent Searching and Data


Title:
INDIUM TARGET AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/117579
Kind Code:
A1
Abstract:
Provided is an indium target, which has high film formation rate with low initial discharge voltage, and furthermore, which has stable film formation rate and stable discharge voltage from start to completion of sputtering. Also provided is a method for manufacturing the indium target. The indium target has a crystal grain aspect ratio (length in the longer direction/length in the shorter direction) of 2.0 or less when observed from the cross-sectional direction of the target.

Inventors:
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
Application Number:
JP2011/065585
Publication Date:
September 07, 2012
Filing Date:
July 07, 2011
Export Citation:
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Assignee:
JX NIPPON MINING & METALS CORP (JP)
ENDO YOUSUKE (JP)
SAKAMOTO MASARU (JP)
International Classes:
C23C14/34
Foreign References:
JPS6344820B21988-09-07
JP2010024474A2010-02-04
Attorney, Agent or Firm:
AXIS Patent International (JP)
Axis international patent business corporation (JP)
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Claims: