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Patent Searching and Data


Title:
INDUSTRIAL PRINTING ALIGNMENT METHOD FOR CRYSTALLINE SILICON SELECTIVE EMITTER
Document Type and Number:
WIPO Patent Application WO/2019/205631
Kind Code:
A1
Abstract:
Disclosed by the present invention is an industrial printing alignment method for a crystalline silicon selective emitter, comprising the following steps: step 1: silicon wafer pre-treatment; step 2: P-N junction preparation; step 3: SE laser doping; step 4: MARK point preparation: adjusting laser parameters such that laser marking energy of a MARK point in a laser preparation process must be higher than SE laser doping energy; step 5: silicon wafer re-treatment; step 6: back-face silk screen printing; step 7: front-face alignment silk screen printing; step 8: sintering testing. The present invention performs two modification methods on a existing laser MARK point of SE technology, wherein laser marking energy of a new MARK point in a laser process must be higher than laser doping line energy, such that the chromaticity and morphology of a laser area is significantly different from that of a non-laser area. At the same time, a square MARK point is punched out by a square laser spot to eliminate edge irregularity, which is beneficial to the naked eye in confirming and observing whether the offset of a machine after printing exceeds a standard amount and the offset direction, and is thus very worthy of promotion.

Inventors:
YANG LEI (CN)
ZHANG GUANLUN (CN)
WU JUNMIN (CN)
CHANG QING (CN)
HONG BUSHUANG (CN)
WANG LAN (CN)
ZHANG PENG (CN)
Application Number:
PCT/CN2018/118252
Publication Date:
October 31, 2019
Filing Date:
November 29, 2018
Export Citation:
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Assignee:
TONGWEI SOLAR ENERGY HEFEI CO LTD (CN)
International Classes:
H01L31/0224; H01L31/18
Foreign References:
CN108493267A2018-09-04
CN107863419A2018-03-30
CN102779894A2012-11-14
CN105326161A2016-02-17
CN102145602A2011-08-10
US8759139B22014-06-24
Attorney, Agent or Firm:
KUNMING HEZHONG ZHIXIN INTELLECTUAL PROPERTY OFFICE (CN)
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