Title:
INFRARED RAY DETECTION ELEMENT AND METHOD FOR MANUFACTURING INFRARED RAY DETECTION ELEMENT
Document Type and Number:
WIPO Patent Application WO/2018/012115
Kind Code:
A1
Abstract:
This infrared ray detection element has a diode part that includes serially connected first and second p-n junction diodes. The diode part has: n-type and p-type well-like first regions that are adjacent to each other; a p-type second region that constitutes a first p-n junction diode with the n-type first region; and an n-type second region that constitutes a second p-n junction diode with the p-type first region. The n-type and p-type first regions are respectively provided with n-type and p-type third regions that electrically connect the first p-n junction diode and the second p-n junction diode via a conductive material. The n-type first region has a p-type fourth region provided between the p-type first region and the p-type second region. The p-type first region has an n-type fourth region provided between the n-type first region and the n-type second region.
Inventors:
YUTANI AKIE (JP)
Application Number:
PCT/JP2017/019131
Publication Date:
January 18, 2018
Filing Date:
May 23, 2017
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
G01J1/02; H01L27/144; H01L31/10
Foreign References:
| JP2009265094A | 2009-11-12 | |||
| US20140091423A1 | 2014-04-03 | |||
| US20060192086A1 | 2006-08-31 | |||
| JP2010276516A | 2010-12-09 | |||
| JP2008014766A | 2008-01-24 | |||
| JP2003156390A | 2003-05-30 | |||
| JP2014153096A | 2014-08-25 |
Attorney, Agent or Firm:
SAMEJIMA, Mutsumi et al. (JP)
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