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Title:
INFRARED RAY SENSOR AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/141496
Kind Code:
A1
Abstract:
[Problem] To provide an infrared ray sensor, and the like, with high detection sensitivity and high mechanical strength. [Solution] An infrared ray sensor (100) is provided with a semiconductor substrate (1), support beams (2), and an infrared ray detection unit (3) supported on the semiconductor substrate by the support beams. The infrared ray detection unit is equipped with a reinforcement structure (31) and an infrared ray detection unit main body (32) that comprises a pyroelectric film (32) formed on the reinforcement structure. The reinforcement structure comprises an edge section (311) which is formed by joining a plurality of cylindrical insulation members (A) and which has a polygonal shape in plan view and comprises an non-placement region (312) in which no cylindrical insulation member is placed within a region demarcated by the edge section. The infrared ray detection unit main body is formed on the reinforcement structure so as to cover the region demarcated by the edge section of the reinforcement structure. The support beams are formed by joining a plurality of cylindrical insulation members and extend from the edge section of the reinforcement structure toward the semiconductor substrate.

Inventors:
KIUCHI MARIO (JP)
Application Number:
PCT/JP2015/056645
Publication Date:
September 24, 2015
Filing Date:
March 06, 2015
Export Citation:
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Assignee:
SUMITOMO PRECISION PROD CO (JP)
International Classes:
G01J1/02; H01L37/02
Domestic Patent References:
WO2011039799A12011-04-07
Foreign References:
JPH11148861A1999-06-02
JPH0961234A1997-03-07
JPH0915037A1997-01-17
JP2000186958A2000-07-04
JP2008111825A2008-05-15
JP2011143518A2011-07-28
Attorney, Agent or Firm:
MAKOTO INTERNATIONAL PATENT ATTORNEYS OFFICE (JP)
Patent business corporation Makoto Patent Attorneys Office (JP)
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