INFRARED SENSOR, INFRARED SENSOR ARRAY, AND INFRARED SENSOR MANUFACTURING METHOD

WIPO Patent Application WO/2020/174731

A1

Provided in the present disclosure is technology that further increases the sensitivity of an infrared sensor. An infrared sensor, according to the present disclosure, comprises: a base substrate; a bolometer infrared light-receiving part; a first beam; and a second beam, wherein: each of the first beam and the second beam comprises a connection part connected to the base substrate and/or a member on the base substrate, and an estranged part that is estranged from the base substrate, and the first and second beams are physically connected to the infrared light-receiving part by the estranged parts; the infrared light-receiving part is supported, by the first beam and the second beam, so as to be estranged from the base substrate; the infrared light-receiving part includes a resistance change part that is made from a resistance change material, the electrical resistance of which changes according to the temperature, the resistance change part comprising an amorphous semiconductor; and the first beam and the second beam each comprise a crystalline semiconductor comprising the same base material as the resistance change material base material, and are electrically connected to the resistance change part by the estranged parts.

TAKAHASHI KOUHEI
TAMBO NAOKI
NAKAMURA KUNIHIKO
FUJIKANE MASAKI
NAITO YASUYUKI

PCT/JP2019/037204

September 03, 2020

September 24, 2019

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PANASONIC IP MAN CO LTD (JP)

G01J1/02; H01L27/144; H01L37/00

JP2003279406A	2003-10-02
JP2007078680A	2007-03-29
JP2017223644A	2017-12-21
JPH01220472A	1989-09-04
US6194722B1	2001-02-27
JP2017223644A	2017-12-21

See also references of EP 3933358A4

KAMATA Kenji et al. (JP)

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