Title:
INGOT CUTTING METHOD REUSING WASTE SLUDGE AND SYSTEM USING SAME
Document Type and Number:
WIPO Patent Application WO/2010/150460
Kind Code:
A1
Abstract:
Provided are a silicon ingot cutting method and a cutting system. The method comprises: performing a primary and secondary centrifugal separations on waste slurry produced when a silicon ingot is cut by a wire saw and separating the waste slurry into a solid content, waste sludge, and a secondary separate liquid; collecting the secondary separate liquid and the solid content; adding new abrasive grains and coolant to the collected secondary separate liquid and solid content to prepare a recovered slurry; and supplying the recovered slurry to the wire saw. In the method, the waste sludge is distilled and separated into a solid residue and a residue solution; the solid residue is classified to separate abrasive grains; and the abrasive grains and the residue solution are collected and additionally added when the recovered slurry is prepared. This makes it possible, upon cutting a silicon ingot by using a wire saw while supplying the recovered slurry including abrasive grains and a coolant which are collected from the waste slurry and reused, to cut the silicon ingot while suppressing the degradation of cutting quality and suppressing a cost increase by improving the collection rate.
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Inventors:
HABATA, Tsutomu (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
幅田勉 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MATSUSHIMA, Hideaki (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
松嶋秀明 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
幅田勉 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MATSUSHIMA, Hideaki (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
松嶋秀明 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
Application Number:
JP2010/003467
Publication Date:
December 29, 2010
Filing Date:
May 24, 2010
Export Citation:
Assignee:
Shin-Etsu Handotai Co.,Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
HABATA, Tsutomu (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
幅田勉 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MATSUSHIMA, Hideaki (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
HABATA, Tsutomu (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
幅田勉 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地信越半導体株式会社 白河工場内 Fukushima, 〒9618061, JP)
MATSUSHIMA, Hideaki (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
International Classes:
B24B57/00; B24B27/06; B28D5/04; B28D7/02; H01L21/304
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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