INGOT GROWING APPARATUS COMPRISING HEATER AND METHOD FOR MANUFACTURING HEATER FOR INGOT GROWING APPARATUS

WIPO Patent Application WO/2022/065739

A1

An ingot growing apparatus is disclosed. An ingot growing apparatus comprising a heater according to an aspect of the present invention may comprise: a crucible for accommodating molten silicon; a growth furnace having an inner space in which the crucible is installed; a susceptor having an inner surface shaped to correspond to the outer surface of the crucible and surrounding the outer surface of the crucible; and a heater for heating the susceptor, wherein the heater may comprise: a coil which is fixed at a position spaced a predetermined distance apart from the outer surface of the susceptor, is formed to be wound along the outer surface of the susceptor to generate a magnetic field, and heats the susceptor by electromagnetic induction due to the magnetic field; and a shield which is formed to surround the outer surface of the coil to support the coil and blocks the coil from being exposed to the inner space of the growth furnace.

JP2000281477	SINGLE CRYSTAL GROWING APPARATUS
JPS60176986	PREPARATION OF SINGLE CRYSTAL OF SEMICONDUCTOR
JPH08198699	METHOD FOR GROWING SINGLE CRYSTAL AND APPARATUS FOR PRODUCING SINGLE CRYSTAL

JEON HAN WOONG (KR)
LEE KYUNG SEOK (KR)
LEE YOUNG JUN (KR)

PCT/KR2021/011945

March 31, 2022

September 03, 2021

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HANWHA SOLUTIONS CORP (KR)
HANWHA CORP (KR)

C30B15/14; B28B1/087; C04B35/66; C30B15/18; C30B29/06; H05B1/02; H05B6/24

JP5228671B2	2013-07-03
KR20200070760A	2020-06-18
KR102138121B1	2020-07-27
JP4808922B2	2011-11-02
JP4749661B2	2011-08-17
KR102271712B1	2021-07-01

ERUUM & LEEON INTELLECTUAL PROPERTY LAW FIRM (KR)

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