Title:
INORGANIC ANION EXCHANGER COMPOSED OF BISMUTH COMPOUND AND RESIN COMPOSITION FOR ELECTRONIC COMPONENT ENCAPSULATION USING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/062723
Kind Code:
A1
Abstract:
Disclosed is a novel bismuth compound which is useful as an inorganic anion exchanger to be used for a semiconductor encapsulating material or the like. Specifically disclosed is a novel bismuth compound represented by the formula (1) below, wherein the peak intensity at 2θ = 27.9˚-28.1˚ is 900-2000 cps and the peak intensity at 2θ =8.45˚-8.55˚ is 100-800 cps in the powder X-ray diffraction pattern. This bismuth compound solves the problems of publicly known inorganic anion exchangers, and exhibits a high performance while being environmentally friendly. Bi(OH)x(NO3)y•nH2O (1) (In the formula (1), x represents a positive number not less than 2.5 but less than 3, y represents a positive number not more than 0.5, and x + y = 3; and n represents 0 or a positive number.)
Inventors:
ONO YASUHARU (JP)
Application Number:
PCT/JP2007/072265
Publication Date:
May 29, 2008
Filing Date:
November 16, 2007
Export Citation:
Assignee:
TOAGOSEI CO LTD (JP)
ONO YASUHARU (JP)
ONO YASUHARU (JP)
International Classes:
C01G29/00; B01J41/10; C08K3/28; C08L101/00; C09D7/61; C09J11/04; C09K3/10; H01L23/29; H01L23/31
Foreign References:
| JP2000016814A | 2000-01-18 | |||
| JPH07267643A | 1995-10-17 | |||
| JPH0655081A | 1994-03-01 | |||
| JPS6360112A | 1988-03-16 | |||
| JPH02294354A | 1990-12-05 |
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