Title:
INSULATED GATE BIPOLAR TRANSISTOR DEVICE, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING INSULATED GATE BIPOLAR TRANSISTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/105749
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide an insulated gate bipolar transistor device which exhibits high performance and high mass productivity, and the like. An insulated gate bipolar transistor device which comprises, as a plurality of trench structures, at least a trench gate, a first dummy trench and a second dummy trench, and wherein: the first dummy trench and the second dummy trench are trench structures adjacent to each other; the trench gate is connected to a gate electrode; the first dummy trench and the second dummy trench are not connected to the gate electrode, while being connected to an emitter electrode; and a source layer of a first conductivity type is formed also between the first dummy trench and the second dummy trench.
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Inventors:
OMURA ICHIRO (JP)
SATOH KATSUMI (JP)
MATSUDAI TOMOKO (JP)
SATOH KATSUMI (JP)
MATSUDAI TOMOKO (JP)
Application Number:
PCT/JP2017/044260
Publication Date:
June 14, 2018
Filing Date:
December 09, 2017
Export Citation:
Assignee:
KYUSHU INST TECH (JP)
MITSUBISHI ELECTRIC CORP (JP)
TOSHIBA KK (JP)
MITSUBISHI ELECTRIC CORP (JP)
TOSHIBA KK (JP)
International Classes:
H01L29/739; H01L21/336; H01L21/82; H01L29/41; H01L29/423; H01L29/49; H01L29/78
Domestic Patent References:
| WO2015162811A1 | 2015-10-29 |
Foreign References:
| JP2011165971A | 2011-08-25 | |||
| JP2014157883A | 2014-08-28 |
Attorney, Agent or Firm:
HADATE Koji (JP)
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