Title:
INSULATED GATE BIPOLAR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREFOR, AND POWER ELECTRONIC EQUIPMENT
Document Type and Number:
WIPO Patent Application WO/2019/085577
Kind Code:
A1
Abstract:
The present invention provides an insulated gate bipolar transistor device and a manufacturing method therefor, and power electronic equipment, so as to improve the overall performance and the applicability of the insulated gate bipolar transistor device. The insulated gate bipolar transistor device comprises a gate structure, which comprises a plurality of plane gate units and a plurality of groove gate units; the plurality of plane gate units is positioned on the same layer; the plurality of groove gate units is positioned on one side of the plurality of the plane gate units, and is intersected with the layer of the plurality of plane gate units; and each plane gate unit is connected to at least two adjacent groove gate units.
Inventors:
SHI BO (CN)
Application Number:
PCT/CN2018/099611
Publication Date:
May 09, 2019
Filing Date:
August 09, 2018
Export Citation:
Assignee:
GREE ELECTRIC APPLIANCES WUHAN CO LTD (CN)
GREE ELECTRIC APPLIANCES INC ZHUHAI (CN)
GREE ELECTRIC APPLIANCES INC ZHUHAI (CN)
International Classes:
H01L29/739; H01L21/331; H01L29/423
Domestic Patent References:
| WO2011118512A1 | 2011-09-29 |
Foreign References:
| CN107706237A | 2018-02-16 | |||
| JP5568904B2 | 2014-08-13 | |||
| CN102412298A | 2012-04-11 | |||
| US20100078674A1 | 2010-04-01 |
Attorney, Agent or Firm:
KANGXIN PARTNERS, P.C. (CN)
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