Title:
INSULATED-GATE BIPOLAR TRANSISTOR MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2015/014289
Kind Code:
A1
Abstract:
An insulated-gate bipolar transistor (IGBT) manufacturing method comprises: providing a first-conduction-type semiconductor substrate (101), the semiconductor substrate (101) having a first main surface and a second main surface; performing source area (100) photoetching and first-conduction-type ion implantation on the first-conduction-type semiconductor substrate (101); forming second-conduction-type base regions (301, 302) on the first main surface, having the source area (100), of the first-conduction-type semiconductor substrate (101) and forming a second-conduction-type protection terminal (200) on an external side of the first main surface having the source area (100); forming a residual first main surface structure of an IGBT on the first main surface of the semiconductor substrate (101) based on the formed base regions (301, 302); and forming a second main surface structure of the IGBT on the second main surface side of the semiconductor substrate (101). The IGBT manufacturing method reduces the number of used photolithography masks, and has a simple process, low manufacturing costs, and high application reliability.
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Inventors:
DENG XIAOSHE (CN)
RUI QIANG (CN)
ZHANG SHUO (CN)
WANG GENYI (CN)
RUI QIANG (CN)
ZHANG SHUO (CN)
WANG GENYI (CN)
Application Number:
PCT/CN2014/083345
Publication Date:
February 05, 2015
Filing Date:
July 30, 2014
Export Citation:
Assignee:
CSMC TECHNOLOGIES FAB1 CO LTD (CN)
International Classes:
H01L21/328; H01L21/331; H01L29/73
Foreign References:
| CN102800591A | 2012-11-28 | |||
| CN103050523A | 2013-04-17 | |||
| CN102171800A | 2011-08-31 | |||
| US20090236697A1 | 2009-09-24 | |||
| US7019358B2 | 2006-03-28 | |||
| JP2009194330A | 2009-08-27 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
广州华进联合专利商标代理有限公司 (CN)
广州华进联合专利商标代理有限公司 (CN)
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