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Patent Searching and Data


Title:
INSULATED GATE DRIVE DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/088354
Kind Code:
A1
Abstract:
An insulated gate drive device is disclosed. The present invention provides an insulated gate drive device which, in driving a full bridge power supply circuit, transmits a driving signal and driving power to a driving circuit for driving respective semiconductor switching devices through a transformer, wherein the driving signal is chopped so as to repeatedly transmit signals with a short pulse width. As such, it is possible to provide an insulated gate driving device for driving a power supply capable of supplying DC to 8 KHz power while effectively reducing the size of the transformer by overcoming the limitations of transformers which are incapable of transmitting DC.

Inventors:
JANG, Sung Roc (103-2303, Sincheon XI Apt. 25, Sinam-ro 16-gil,,Dong-gu, Daegu, 41203, KR)
KIM, Jong Soo (1st floor, 18 Changi-daero 217beon-gil,,Uichang-gu, Changwon-si, Gyeongsangnam-do, 51181, KR)
KIM, Hyoung Suk (101-902, Guhak Maeul Apt. 15, Hakgam-daero 49beon-gil,,Sasang-gu, Busan, 47054, KR)
YU, Chan Hun (A-514, Korea Electro Technology Research Institute dormitory 12, Bulmosan-ro 10beon-gil,,Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, KR)
BAE, Jeong Su (A-208, Korea Electro Technology Research Institute dormitory 12, Bulmosan-ro 10beon-gil,,Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, KR)
Application Number:
KR2017/014851
Publication Date:
May 09, 2019
Filing Date:
December 15, 2017
Export Citation:
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Assignee:
KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE (12 Bulmosan-ro 10beon-gil, Seongsan-gu, Changwon-si, Gyeongsangnam-do, 51543, KR)
International Classes:
H03K17/082; H02M1/32; H03K17/567
Foreign References:
KR20170010992A2017-02-02
US20160141965A12016-05-19
US20150180346A12015-06-25
KR20140067260A2014-06-05
JP2013017011A2013-01-24
Attorney, Agent or Firm:
B&IP-JOOWON PATENT AND LAW FIRM (9th Floor, Construction Center Eonju-ro 711,,Gangnam-gu, Seoul, 06050, KR)
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