Title:
INSULATED GATE SEMICONDUCTOR DEVICE DRIVE CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2018/150737
Kind Code:
A1
Abstract:
A drive circuit is used for supplying charge/discharge current for driving, for example, the gate of an IGBT 1 in an X-phase, said IGBT 1 being an insulated gate semiconductor device. The drive circuit is configured for driving the IGBT 1 by being provided with: a constant current generation unit 11 adopting a current mirror scheme; a discharge circuit 13 for extracting the charge injected into the gate of the IGBT 1 in accordance with a drive signal; and a switching circuit 12 for supplying the drive signal to the discharge circuit 13 via a buffer 6 and inputting the drive signal to the gate of a PMOS transistor 3 via a level shift circuit 7, thereby switching between charging and discharging of the gate of the insulated gate semiconductor device.
Inventors:
MORI TAKAHIRO (JP)
Application Number:
PCT/JP2017/046341
Publication Date:
August 23, 2018
Filing Date:
December 25, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H02M1/08; H02M7/48; H03K17/56
Domestic Patent References:
| WO2016009582A1 | 2016-01-21 |
Foreign References:
| JPH08340245A | 1996-12-24 | |||
| JP2007252098A | 2007-09-27 | |||
| JP2005027429A | 2005-01-27 |
Attorney, Agent or Firm:
OSUGA, Yoshiyuki (JP)
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