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Title:
INSULATED GATE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING INSULATED GATE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/199580
Kind Code:
A1
Abstract:
This insulated gate semiconductor device is provided with: a semiconductor chip (Qj); an insulating circuit board (100) having a first external terminal (31) and a second external terminal (30); a main current path member (21) which is provided on the insulating circuit board (100) in the form of a planar pattern having a linearly extending portion, and through which a main current (Ic) of the semiconductor chip (Qj) flows toward the first external terminal (31); and a gate current path member (20) which is provided on the insulating circuit board (100) in the form of a planar pattern having a linearly extending portion that is arranged parallel to the linearly extending portion of the main current path member (21), and wherein a gate current (Ig) for controlling the main current (Ic) flows through the parallel arranged portion in a direction opposite to the direction of the main current (Ic) flows. A current generated in the gate current path member (20) by mutual induction caused by a change of the magnetic field produced by the main current (Ic) is used for increase of the gate current (Ig) at the time of turn-on of the semiconductor chip (Qj).

Inventors:
MASUDA SHINICHI (JP)
YOSHIWATARI SHINICHI (JP)
YOSHIDA KENICHI (JP)
ISHIDA HIROSHI (JP)
Application Number:
PCT/JP2017/011840
Publication Date:
November 23, 2017
Filing Date:
March 23, 2017
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H03K17/567; H01L29/739; H01L29/78; H02M1/08
Foreign References:
JP2009021345A2009-01-29
JP2005268649A2005-09-29
Attorney, Agent or Firm:
SUZUKI Sohbe (JP)
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