Title:
INSULATED GATE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/141560
Kind Code:
A1
Abstract:
[Problem] To improve electrostatic discharge resistance of an insulated gate semiconductor device that is equipped with: a main insulated gate transistor that is provided with a gate electrode that controls a main current; a current-detecting insulated gate transistor, which is provided in parallel to the main insulated gate transistor, and which outputs a current proportional to a main current flowing in the main insulated gate transistor; and a temperature detection diode, which is formed on a same semiconductor substrate with the insulated gate transistors.
[Solution] The present invention ensures electrostatic discharge resistance of a current-detecting insulated gate transistor using a temperature-detecting diode by disposing an electrostatic resistant zener diode between an emitter electrode of a current-detecting insulated gate transistor, and an anode electrode of a temperature-detecting diode.
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Inventors:
SATO SHIGEKI (JP)
Application Number:
PCT/JP2017/000053
Publication Date:
August 24, 2017
Filing Date:
January 04, 2017
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/822; H01L27/04
Foreign References:
| JP2007287919A | 2007-11-01 | |||
| JP2007266089A | 2007-10-11 | |||
| JP2008042950A | 2008-02-21 | |||
| JP2008153615A | 2008-07-03 | |||
| JP2004515911A | 2004-05-27 |
Attorney, Agent or Firm:
HOSHINO, Hiroshi (JP)
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