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Patent Searching and Data


Title:
INSULATED GATE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/141560
Kind Code:
A1
Abstract:
[Problem] To improve electrostatic discharge resistance of an insulated gate semiconductor device that is equipped with: a main insulated gate transistor that is provided with a gate electrode that controls a main current; a current-detecting insulated gate transistor, which is provided in parallel to the main insulated gate transistor, and which outputs a current proportional to a main current flowing in the main insulated gate transistor; and a temperature detection diode, which is formed on a same semiconductor substrate with the insulated gate transistors. [Solution] The present invention ensures electrostatic discharge resistance of a current-detecting insulated gate transistor using a temperature-detecting diode by disposing an electrostatic resistant zener diode between an emitter electrode of a current-detecting insulated gate transistor, and an anode electrode of a temperature-detecting diode.

Inventors:
SATO SHIGEKI (JP)
Application Number:
JP2017/000053
Publication Date:
August 24, 2017
Filing Date:
January 04, 2017
Export Citation:
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Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L21/822; H01L27/04
Foreign References:
JP2007287919A2007-11-01
JP2007266089A2007-10-11
JP2008042950A2008-02-21
JP2008153615A2008-07-03
JP2004515911A2004-05-27
Attorney, Agent or Firm:
HOSHINO, HIROSHI (JP)
Yuji Hoshino (JP)
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