Title:
INSULATING FILM ETCHANT COMPOSITION AND PATTERN FORMING METHOD USING SAME
Document Type and Number:
WIPO Patent Application WO/2020/017723
Kind Code:
A1
Abstract:
Insulating film etchant compositions according to embodiments of the present invention comprise a phosphoric acid, a silane compound having a hydroxyalkyl group or an equivalent thereof, and extra water. The present invention can passivate a silicon oxide film effectively and suppress gelation and silicon oxide regrowth.
Inventors:
LEE EUN JUNG (KR)
KIM BYOUNG MOOK (KR)
KIM JEONG HWAN (KR)
KIM TAE HEE (KR)
YOON SEONG WOONG (KR)
LEE DONG GYU (KR)
LEE TAE KYUNG (KR)
JEONG MYEONG IL (KR)
CHOI HAN YOUNG (KR)
KIM BYOUNG MOOK (KR)
KIM JEONG HWAN (KR)
KIM TAE HEE (KR)
YOON SEONG WOONG (KR)
LEE DONG GYU (KR)
LEE TAE KYUNG (KR)
JEONG MYEONG IL (KR)
CHOI HAN YOUNG (KR)
Application Number:
PCT/KR2019/002103
Publication Date:
January 23, 2020
Filing Date:
February 21, 2019
Export Citation:
Assignee:
DONGWOO FINE CHEM CO LTD (KR)
International Classes:
C09K13/06; H01L21/306; H01L21/3213
Foreign References:
| KR20170066180A | 2017-06-14 | |||
| KR20170093430A | 2017-08-16 | |||
| US20050159011A1 | 2005-07-21 | |||
| US20160017224A1 | 2016-01-21 | |||
| JP2000058500A | 2000-02-25 |
Attorney, Agent or Firm:
LEECHAE INTELLECTUAL PROPERTY (KR)
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