INSULATION FILM ETCHANT COMPOSITION AND PATTERN FORMATION METHOD USING SAME

Title:

INSULATION FILM ETCHANT COMPOSITION AND PATTERN FORMATION METHOD USING SAME

Document Type and Number:

WIPO Patent Application WO/2020/040385

Kind Code:

A1

Abstract:

An insulation film etchant composition according to embodiments of the present invention comprises a phosphoric acid, a silane compound having a C1-C4 hydroxyalkoxy group, and the remainder of water. It is possible to effectively passivate a silicon oxide film and to effectively inhibit gelation.

Inventors:

YOON SEONG WOONG (KR)
LEE EUN JUNG (KR)
LEE TAE KYUNG (KR)
KIM BYOUNG MOOK (KR)
KIM TAE HEE (KR)
CHOI HAN YOUNG (KR)

Application Number:

PCT/KR2019/002073

Publication Date:

February 27, 2020

Filing Date:

February 20, 2019

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Assignee:

DONGWOO FINE CHEM CO LTD (KR)

International Classes:

C09K13/06; H01L21/306

Foreign References:

KR20140079267A	2014-06-26
KR20180074951A	2018-07-04
KR20170126049A	2017-11-16
KR20180058610A	2018-06-01
KR20130125561A	2013-11-19

Attorney, Agent or Firm:

LEECHAE INTELLECTUAL PROPERTY (KR)

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