Title:
INSULATION FILM MANUFACTURING METHOD OF SEMICONDUCTOR PROCESS
Document Type and Number:
WIPO Patent Application WO/2023/140541
Kind Code:
A1
Abstract:
The present invention provides an insulating film manufacturing method of a semiconductor process, the method comprises the steps of: placing a wafer in a processing chamber; by supplying a source gas to the processing chamber at a first pressure higher than an atmospheric pressure, forming an insulating film on the wafer as at least one of an oxidation process and a nitridation process proceeds; by supplying a purge gas to the processing chamber, purging the source gas; and, by supplying atmospheric gas to the processing chamber at a second pressure higher than atmospheric pressure, strengthening the insulation film as the heat treatment process proceeds.
Inventors:
CHO SUNG KIL (KR)
Application Number:
PCT/KR2023/000212
Publication Date:
July 27, 2023
Filing Date:
January 05, 2023
Export Citation:
Assignee:
HPSP CO LTD (KR)
International Classes:
H01L21/02
Foreign References:
| KR20090031658A | 2009-03-27 | |||
| US20200006063A1 | 2020-01-02 | |||
| KR20210130247A | 2021-10-29 | |||
| KR20200103850A | 2020-09-02 | |||
| KR20120125069A | 2012-11-14 |
Attorney, Agent or Firm:
JYK IP LAW FIRM (KR)
Download PDF:
Previous Patent: QUICK RECOVERY INDICATION AND RETRANSMISSION REQUEST
Next Patent: TEMPERATURE MEASUREMENT DEVICE
Next Patent: TEMPERATURE MEASUREMENT DEVICE