Title:
INTEGRATED APPARATUS HAVING THIN-FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/077538
Kind Code:
A1
Abstract:
An integrated apparatus having a thin-film transistor device (105) and a manufacturing method thereof The integrated apparatus comprises a base (100), a chip (103) and a thin-film transistor device (105). The thin-film transistor device (105) is provided above the base (100). The base (100) has a recess structure (101) extending downwardly from an upper surface thereof. At least one connection line (102) is provided in the recess structure (101). The chip (103) is provided in the recess structure (101), and is connected to the thin-film transistor device (105) by means of the at least one connection line (102). In the integrated apparatus, the base (100) and the thin-film transistor device (105) form a thin-film transistor (TFT), and the chip (103) for controlling the TFT is integrated into the base of the TFT, thereby preventing the chip (103) from occupying an effective active area of the TFT while greatly reducing external connection terminals of the integrated apparatus, and accordingly effectively simplifying the entire structure of the integrated apparatus.
Inventors:
WANG WENXUAN (CN)
SHEN JIAN (CN)
SHEN JIAN (CN)
Application Number:
PCT/CN2018/110508
Publication Date:
April 23, 2020
Filing Date:
October 16, 2018
Export Citation:
Assignee:
SHENZHEN GOODIX TECH CO LTD (CN)
International Classes:
H01L51/56; H01L51/52
Foreign References:
| CN106898706A | 2017-06-27 | |||
| US20170179192A1 | 2017-06-22 | |||
| CN108183156A | 2018-06-19 | |||
| CN106898633A | 2017-06-27 |
Attorney, Agent or Firm:
LONGSUN LEAD IP LTD. (CN)
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