Title:
INTEGRATED ASHING AND IMPLANT ANNEALING METHOD
Document Type and Number:
WIPO Patent Application WO2005043603
Kind Code:
A3
Abstract:
After ion implantation, thermal ashing is conducted in a high oxygen concentration at a pressure of between about 100 to about 760 Torr at below 700°C to remove the resist. Since photoresist consists of Carbon (C), Hydrogen (H) and Oxygen (O), the products of reaction of the thermal oxidation of the photoresist include CO2 and H2O. Since the process includes a substantial amount of oxygen, the resist can be completely oxidized, thus leaving no residue or other contaminates to remain on the substrate.
Inventors:
YOO WOO SIK (US)
Application Number:
PCT/US2004/034637
Publication Date:
June 30, 2005
Filing Date:
October 19, 2004
Export Citation:
Assignee:
WAFERMASTERS INC (US)
YOO WOO SIK (US)
YOO WOO SIK (US)
International Classes:
G03F7/42; H01L21/311; (IPC1-7): H01L21/311; G03F7/42
Domestic Patent References:
| WO2001029879A2 | 2001-04-26 |
Foreign References:
| US5709754A | 1998-01-20 | |||
| US4936772A | 1990-06-26 | |||
| EP0910118A1 | 1999-04-21 |
Other References:
PATENT ABSTRACTS OF JAPAN vol. 008, no. 149 (E - 255) 12 July 1984 (1984-07-12)
PATENT ABSTRACTS OF JAPAN vol. 012, no. 115 (E - 599) 12 April 1988 (1988-04-12)
PATENT ABSTRACTS OF JAPAN vol. 012, no. 115 (E - 599) 12 April 1988 (1988-04-12)
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