Title:
INTEGRATED GETTER AREA FOR WAFER LEVEL ENCAPSULATED MICROELECTROMECHANICAL SYSTEMS
Document Type and Number:
WIPO Patent Application WO2005081702
Kind Code:
A3
Abstract:
There are many inventions described and illustrated herein. In one aspect, present invention is directed to a thin film encapsulated MEMS, and technique of fabricating or manufacturing a thin film encapsulated MEMS including an integrated getter area arid/or an increased chamber volume, which causes little to no increase in overall dimension(s) from the perspective of the mechanical structure and chamber. The integrated getter area is disposed within the chamber and is capable of (i) "capturing" impurities, atoms and/or molecules that are out-gassed from surrounding materials and/or (ii) reducing and/or minimizing the adverse impact of such impurities, atoms and/or molecules (for example, reducing the probability of adding mass to a resonator which would thereby change the resonator's frequency). In this way, the thin film wafer level packaged MEMS of the present invention includes a relatively stable, controlled pressure environment within the chamber to provide, for example, a more stable predetermined, desired and/or selected mechanical damping of the mechanical structure.
Inventors:
LUTZ MARKUS (US)
PARTRIDGE AARON (US)
PARTRIDGE AARON (US)
Application Number:
PCT/US2004/034658
Publication Date:
December 22, 2005
Filing Date:
October 20, 2004
Export Citation:
Assignee:
BOSCH GMBH ROBERT (DE)
LUTZ MARKUS (US)
PARTRIDGE AARON (US)
LUTZ MARKUS (US)
PARTRIDGE AARON (US)
International Classes:
B81C1/00; H01L21/00; H01L29/84; (IPC1-7): B81C1/00; H01L21/00
Domestic Patent References:
| WO2001077099A1 | 2001-10-18 |
Other References:
VOSSEN: "Thin film Processes.", vol. 1, 1978, ACADEMIC PRESS., ISBN: 0127282513, XP008111006
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