Title:
INTEGRATED NON-VOLATILE MEMORY ELEMENTS, DESIGN AND USE
Document Type and Number:
WIPO Patent Application WO/2013/017131
Kind Code:
A3
Abstract:
The invention describes the production and the design of an integrated memory component, comprising at least one surface contact (C) and a mating contact (O) from which at least one rectifying contact is embodied, and a ferroelectric or piezoelectric layer (11) as a conductive channel between the contacts. The design of the memory component with an additional drain connection and an additional source connection for non-volatile control of the conductivity between the source and the drain connection via the rectifying bottom contact or top contact is also described. The principle and the design are then extended to non-volatile analog memories, wherein the conductivity of the piezo- or ferroelectric layer between the contacts and/or beneath the surface contact and/or beneath the associated mating contact is modified, so that a voltage which is applied from the outside to opposite contacts is not dropped uniformly in the piezo- or ferroelectric layer and the electric field is locally large/small and a large electric field can induce a phase conversion of the piezo- or ferroelectric layer. The integration and use of the non-volatile analog memory in an array structure for neuromorphic applications and as a calibration element with an underlying CMOS analog circuit is also described. The principle of the design of the memory component according to the invention can also be extended as an electrode which can be integrated and has a boundary layer which can be positioned in a non-volatile manner and is statically charged. The use of the electrode, which can be integrated, in photo components, particle detectors, in capacitive energy storage means and in logic components is also described.
Inventors:
SCHMIDT HEIDEMARIE (DE)
SHUAI YAO (DE)
ZHOU SHENGQIANG (DE)
SKORUPA ILONA (DE)
OU XIN (DE)
DU NAN (DE)
MAYR CHRISTIAN (DE)
LUO WENBO (DE)
SHUAI YAO (DE)
ZHOU SHENGQIANG (DE)
SKORUPA ILONA (DE)
OU XIN (DE)
DU NAN (DE)
MAYR CHRISTIAN (DE)
LUO WENBO (DE)
Application Number:
PCT/DE2012/200047
Publication Date:
April 25, 2013
Filing Date:
July 12, 2012
Export Citation:
Assignee:
HELMHOLTZ ZENTRUM DRESDEN (DE)
SCHMIDT HEIDEMARIE (DE)
SHUAI YAO (DE)
ZHOU SHENGQIANG (DE)
SKORUPA ILONA (DE)
OU XIN (DE)
DU NAN (DE)
MAYR CHRISTIAN (DE)
LUO WENBO (DE)
SCHMIDT HEIDEMARIE (DE)
SHUAI YAO (DE)
ZHOU SHENGQIANG (DE)
SKORUPA ILONA (DE)
OU XIN (DE)
DU NAN (DE)
MAYR CHRISTIAN (DE)
LUO WENBO (DE)
International Classes:
H01L31/0224; H01G4/005; H01L45/00
Domestic Patent References:
| WO2010014974A2 | 2010-02-04 | |||
| WO2010151844A2 | 2010-12-29 | |||
| WO2011100551A1 | 2011-08-18 |
Foreign References:
| EP1628352A1 | 2006-02-22 | |||
| JPH1056088A | 1998-02-24 | |||
| US20020025637A1 | 2002-02-28 |
Other References:
WANG CAN ET AL: "Switchable diode effect and ferroelectric resistive switching in epitaxial BiFeO3 thin films", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 98, no. 19, 10 May 2011 (2011-05-10), pages 192901 - 192901, XP012140645, ISSN: 0003-6951, DOI: 10.1063/1.3589814
SHUAI YAO ET AL: "Nonvolatile bipolar resistive switching in Au/BiFeO 3 /Pt", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 109, no. 12, 29 June 2011 (2011-06-29), pages 124117 - 124117, XP012147254, ISSN: 0021-8979, DOI: 10.1063/1.3601113
T. CHOI ET AL: "Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3", SCIENCE, vol. 324, no. 5923, 3 April 2009 (2009-04-03), pages 63 - 66, XP055053774, ISSN: 0036-8075, DOI: 10.1126/science.1168636
SHUAI YAO ET AL: "Nonvolatile bipolar resistive switching in Au/BiFeO 3 /Pt", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 109, no. 12, 29 June 2011 (2011-06-29), pages 124117 - 124117, XP012147254, ISSN: 0021-8979, DOI: 10.1063/1.3601113
T. CHOI ET AL: "Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3", SCIENCE, vol. 324, no. 5923, 3 April 2009 (2009-04-03), pages 63 - 66, XP055053774, ISSN: 0036-8075, DOI: 10.1126/science.1168636
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