Background of the Invention: The capability for transferring data modulating an optical carrier onto another optical carrier with a different wavelength by optical means (wavelength conversion) is important in wavelength division multiplexing (WDM). With the emergence of both wavelength-switching and packet-switching based highly dynamic optical networks, it is desirable to have efficient switching devices that are capable of both routing fast optical data packets to different directions in space and converting the wavelength of the data packets. Due to the large scale and high complexity of these networks, it is desirable to combine the two functions in one router/wavelength converter component, and to produce an monolithic photonic device that integrate large number of such router/wavelength converter components.

One prior art wavelength conversion approach is described in the paper Analysis of tunable wavelength converters based on cross-gain modulation in semiconductor optical amplifiers operating in the counter propagating mode', Tzanakaki and O'Mahony, IEE Proceedings: Optoelectronics, 2000, Vol. 147, No. l, pp. 49-55. In this scheme a semiconductor optical amplifiers (SOA) is used. The optical data carried by one light beam saturates the SOA, causing the intensity of another continuous wave (CW) light beam with a different wavelength that also passes the SOA to change

accordingly, therefore transfers the data on to the other light beam.

Another prior art approach for wavelength conversion is described in Analysis and fabrication of an all- optical wavelength converter based on directionally- coupled semiconductor optical amplifiers', Ma, Saitoh, Nakano, IEICE Transactions on Electronics, 2000, Vol. v E83-C, No. 2, pp. 248-254. In this scheme the SOA is modified to have two laterally coupled waveguides fabricated in the same plane on a semiconductor substrate. Better performance may be expected than the single waveguide SOA device.

Another prior art approach for wavelength conversion is described in 40-Gb/s all-optical wavelength conversion, regeneration, and demultiplexing in an SOA- based all-active Mach-Zehnder interferometer', Wolfson, Kloch, Fjelde, Janz, Dagens, Renaud, IEEE Photonics Technology Letters, 2000, Vol. 12, No. 3, pp. 332-334. In a interferometric arrangement, data carried by a light beam changes the phase of another CW light beam that passes through the SOA by cross phase modulation in the SOA. The interferometer converts the phase change into intensity change.

Previously-considered approaches to optical routing are described in paper WdD. 04 by F. Dorgeuille et al., at ECOC'98, Madrid, 1998, where SOA arrays are used as optical gates.

Summary of the Invention: Particular embodiments of the present invention can provide:

1. An optical component that is controlled by an external signal. When the controlling signal is present, the component allows a first input light beam to leave the component by way of a first chosen direction. When the controlling signal is absent, the component allows the same light beam to leave the component by way of a second chosen direction. The component may be known as an optical router, an optical space switch, or an optical crosspoint switch.

2. A component that, while allowing the first input light beam to travel to one of the chosen directions, imparts data carried by the first input light beam on to a second light beam having a wavelength that is different from the first input light beam. This data transfer process is known as wavelength conversion. A component in which wavelength conversion happens is known as a wavelength converter.

3. A component that, while allowing a first input light beam to travel to one of the chosen directions, imparts data carried by a second input light beam on to the first light beam that has a wavelength that is different from the second input light beam.

4. A component that, with the presence of a first light beam, allows data carried by a second light beam having a wavelength that is different from the first light beam to be imparted onto a third light beam and allows the third light beam to leave the component by way of a chosen direction. The third light beam has a wavelength that is different from both the first and the second light beams.

5. An optical device consisting of a plurality of such

components integrated on a single substrate.

Other objectives and advantages of the invention will become apparent from the detailed description that follows. The detailed description and specific embodiments are provided only for illustration purposes. Various additions and modifications within the scope of the invention will be apparent to those skilled in the art.

An embodiment of a first aspect of the present invention provides a first semiconductor layer comprising: an appropriate crystal composition disposed on a semiconductor substrate, a second semiconductor layer having a crystal composition different from the first semiconductor layer disposed on the first semiconductor layer, so that a first lower optical slab waveguide is formed with the first semiconductor layer as its core, a third semiconductor layer having a crystal composition different from the second semiconductor layer disposed on the second semiconductor layer, a fourth semiconductor layer having a crystal composition different from the third semiconductor layer disposed on the third semiconductor layer to form a second upper optical slab waveguide with the third semiconductor layer as its core. A structure known as a vertical optical coupler is therefore constructed by the presence of the first and the second optical slab waveguides on the same semiconductor substrate.

In an embodiment of a second aspect of the present invention, first and second groups of parallel optical ridge waveguides are formed on the semiconductor substrate. The two groups of ridge waveguides intersect

each other.

In an embodiment of a third aspect of the present invention, a plurality of deflecting surfaces normal to the semiconductor layer plane are formed at each intersection between the first group of optical ridge waveguides and the second group of optical ridge waveguides. The depth and orientation of these surfaces are arranged such that each of these surfaces deflects most or all optical power travelling in the upper optical slab waveguide (the third semiconductor layer) in a first ridge waveguide into the same second optical slab waveguide in a second ridge waveguide.

In an embodiment of a fourth aspect of the invention, input light beams are launched into the lower optical slab waveguide (or the first semiconductor layer) in one or more ridge waveguides.

In an embodiment of a fifth aspect of the present invention, the optical properties including refractive index and optical absorption or gain of one or both slab waveguides are influenced by external signals that are applied to the vertical optical coupler structure.

Therefore the optical coupling between the lower and the upper slab waveguides is controlled by said external signal. The intensity of light beams may also be changed by the said control signals due to changes in absorption or gain. As a result, when an external control signal enables strong optical coupling, the input light beams propagating in the lower optical slab waveguide of a first ridge waveguide couple into the upper slab waveguide. The input light beams that are coupled into the upper waveguide may be deflected by the reflecting surfaces into a second ridge waveguide

and couple into the lower slab waveguide in the second ridge waveguide. The input light beams are therefore routed to a chosen direction. Where and when an external control signal allows only weak optical coupling, the input light beams propagating in the lower optical slab waveguide of a first ridge waveguide essentially remain in the lower slab waveguide and propagate in its original direction.

In an embodiment of a sixth aspect of the present invention, at a given external control signal amplitude, the optical properties including refractive index and optical absorption or gain of one or both slab waveguides are changed by the intensity of light in one or both slab waveguides. Therefore the optical coupling between the lower and the upper slab waveguides in a ridge waveguide is changed by the light intensity in the ridge waveguide. The magnitude of light is also changed by the changes in optical loss or gain of the ridge waveguides. As a result when more than one light beam are present in the same ridge waveguide, the data modulating one of the light beam that is routed into the chosen direction may be imparted onto other beams having different wavelengths that are present or generated in the ridge waveguide.

The process of wavelength conversion is therefore implemented.

Brief Description of Drawings Fig. 1 is an illustration of a semiconductor substrate with a vertical optical coupler layer structure.

Fig. 2 is a plan view of an optical router/wavelength converter matrix'formed on the substrate of Fig. 1.

Figs. 3 (a)- (g) illustrate a preferred process for fabricating an optical router/wavelength converter matrix integrating a plurality of optical router/ wavelength converter components.

Figs. 4 (a) and (b) illustrate an optical router/ wavelength converter component routing an input light beam to two different output ports.

Fig. 5 illustrates a preferred embodiment where free carriers are injected into and confined in the core layer of the upper slab waveguide by means of an electric current and a p-i-n double hetero-junction structure.

Fig. 6 illustrates another preferred embodiment where an electric field can be applied across the upper waveguide core layer by forming a p-i-n junction.

Fig. 7 illustrates a first wavelength conversion mode in the present invention where data-carrying and CW light beams travel the same route through the device but in opposite directions (counter-propagation).

Fig. 8 illustrates a second wavelength conversion mode

in the present invention where data-carrying and CW light beams travel the same route through the device in the same direction (co-propagation).

Fig. 9 illustrates a third wavelength conversion mode in the present invention where a data-carrying light beam enters the component from a port that is different from the part through which the CW light beam enters the component.

Fig. 10 illustrates a fourth wavelength conversion mode where a data-carrying light beam enters the component from another port that is different from that of the CW light beam.

Detailed description of the preferred embodiments The preferred embodiments and their modes of operation described hereafter are given as examples and are demonstrations of the operating principles and main advantages of the present invention. Other embodiments, advantages and operational modes of the present invention can be inferred from the descriptions given in this patent and be obvious to those skilled in the art.

Fig. 1 illustrates a semiconductor wafer layer structure that can be used to fabricate an optical router/ wavelength converter device. Successive semiconductor layers (102)- (105) are disposed on a semiconductor substrate (101). The layer structure is designed such that optimised optical coupling is achieved at a chosen state of a control signal, and the design will vary according to the control and wavelength conversion mechanisms used. The layers are separated for illustration of optical guiding functionality. Each

layer may be provided by a group of layers that may be necessary for other electronic and optical purposes.

For example, the slab waveguide core layers (102) and (104) may contain multiple quantum well structures.

A first embodiment of the present invention will now be described.

A semiconductor wafer is prepared as shown in Fig. 5. An n-type InP buffer layer (501) is first disposed on a n+ InP substrate. An n-type InGaAsP layer (502) of appropriate bandgap energy, another InP layer (503), another undoped InGaAsP layer (504), and a third InP layer that is p-type doped are disposed successively on the buffer layer (501). Further layers may be necessary for contact purposes. Layer (502) acts as the core layer of an optically passive lower slab waveguide (102), and has a bandgap energy that is larger than an input light beam photon energy. The undoped InGaAsP layer (504) acts as an optically active upper slab waveguide core layer (104). The semiconductor layers are doped so that a p-i-n double hetero-junction structure is formed around the upper slab waveguide core layer.

A preferred method of fabricating the preferred embodiment is described below. Corresponding illustrations are presented in Fig. 3 (a), (b), (c), (d), (e), (f) and (g).

Two groups of ridge waveguides (202) and (203) are to be formed as shown in Fig. 2. Both groups consist of vertical coupler sections and passive waveguide sections, where the upper slab waveguide layer is removed. The vertical couplers are connected to each other at the intersection between two ridge waveguides

where a vertical deflecting surface relates both ridge waveguides optically.

To form the ridge waveguide structures, a first mask material (305) is disposed on the wafer (201). This first mask material is patterned by a photolithography process followed by a dry etching process. The patterned first mask material is shown in Fig. 3 (a).

A second mask material (306) is subsequently disposed on the wafer (201) and patterned by a second photolithography process. The second mask is aligned to the first mask material as shown in Fig. 3 (b). The first mask material is then etched again using the second mask material as etch mask. A self aligned, two layer mask is thus formed on the wafer, as illustrated in Fig. 3 (c).

The ridge waveguides are formed by a two step etching process.

In the first etching step, the semiconductor wafer material (201) is etched to a suitable depth from the areas that are not covered by either mask materials, as shown in Fig. 3 (d). The second mask material (306) is then removed by a selective etch process that does not etch both the first mask material and the wafer material. The resulting structure is illustrated in Fig. 3 (e).

The light deflecting surface (206) and the vertical coupler section (205) are formed by a second etching step. In this second step the semiconductor is etched to a depth that is between the two slab waveguide core layers (102) and (104), resulting in the structure shown in Fig. 3 (f). The etching process should produce a

light deflecting surface (206) that is smooth and vertical to the substrate plane. The first mask material (305) is subsequently removed from the wafer.

As shown in Fig. 3 (g), the ridge waveguides are then buried in a suitable insulating material (308) that is disposed on to the wafer and that serves to improve the insulation between the ridge waveguides and the surroundings. A third photolithography step is used to pattern this insulating material, so that the top surfaces of the vertical coupler section (205) are exposed by removing the insulating material from the same area. An ohmic contact (309)/ (506) is formed by disposing suitable metal layers on the exposed p-type semiconductor surface. A second ohmic contact (310)/ (507) is formed on the opposite (n+-type) side of the substrate.

An integrated device as illustrated in Fig. 3 (g) is produced by cleaving the processed wafer (201) into devices containing chosen number of components, with four groups of optical ports (301), (302), (303), and (304).

A description of the operational principle of the first preferred embodiment is given below. Related illustrations are presented in Fig. 4, Fig. 5, Fig. 7, Fig. 8, Fig. 9 and Fig. 10.

As illustrated in Fig. 4 (b), the semiconductor layer structure is designed so that when no electric voltage is applied between the two ohmic contacts, the optical coupling between the lower slab waveguide core layer (102) and the upper slab waveguide core layer (104) is weak. Therefore a input light beam (401) entering the lower slab waveguide via port (301) will travel within

the confines of the lower slab waveguide and will leave the router/wavelength converter component via port (303). The ridge waveguide of port (303) leads either to the next the component in a integrated device matrix, or to the edge of the integrated device where the light beam leaves the device.

As illustrated in Fig. 4 (a), when a positive voltage is applied to the p-side ohmic contact (506), an electric current flows from the p-side ohmic contact (506) to the n-side ohmic contact (507). The positive voltage causes a flow of holes (508) from the p-type InP layer (505) and a second flow of electrons (509) from the n- type InP layer (503) into the un-doped InGaAsP layer (504). The electrons and holes are confined in the un- doped InGaAsP layer (504) because of the smaller bandgap energy of un-doped InGaAsP layer (504) compared to that of the surrounding layers (503) and (506). The un-doped InGaAsP layer (504) changes from having a high optical absorption to having an optical gain because of the presence of electron and hole population. The refractive index of the un-doped InGaAsP layer (504) also changes because of the presence of electron and hole population.

The semiconductor layer parameters are so designed that at a certain carrier population, the optical coupling between the lower slab waveguide core layer (502)/ (102) and the upper slab waveguide core layer (504)/ (104) becomes strong in the vertical coupler section due to the changed refractive index in the upper slab core layer (504). This strong optical coupling results from the refractive index change in the upper slab waveguide core layer (504) that causes the propagation constants

of both slab waveguides to become very close or equal.

A significant optical power transfer happens between the said layers. The length of the vertical coupler section (205) is so designed that maximum optical power transfer happens over the two parts of the vertical coupler section (205a) and (205b) on either side of the deflecting surface (206).

As a result, under the influence of the positive voltage that is applied between the p-side ohmic contact (506) and the n-side ohmic contact (507), the routing process illustrated in Fig. 4 (a) happens in the router/wavelength converter component. A light beam (401) entering port (301) is mostly coupled from the lower slab waveguide (102) to the upper slab waveguide (104) in the first section of the vertical coupler, deflected by the vertical surface (206) into the second section of the vertical coupler (205), and routed to port (302) by coupling from the upper slab waveguide (104) to the lower slab waveguide (102). Because of the optical gain that exists in the upper slab waveguide core (504)/ (104), when the wavelength of the light beam is within the optical gain bandwidth, the intensity of the beam can also be amplified while it is routed.

The ridge waveguide of port (302) leads either to the next the component in a integrated device matrix, or to the edge of the integrated device where the light beam leaves the device.

A first wavelength conversion mode (counter- propagation) in the first particular embodiment of the present invention is illustrated in Fig. 7.

A first light beam (701) whose intensity is modulated by a data signal enters the router/wavelength converter

component via port (301). The component that is the first preferred embodiment of the present invention is applied with a positive voltage between the p-side and n-side ohmic contacts (506) and (507). The resulting carrier population injected in the upper slab waveguide core layer (504) causes a change in refractive index and an optical gain. According to above descriptions, the component routes the first light beam (701) to port (302) and exit as output beam (702).

A second light beam that has a wavelength different from the first light beam and that is constant in intensity enters the component by way of port (302).

According to the same principles described above, the second light beam travels exactly the same route as the first light beam but in the opposite direction, and exit the component via port (301) as output beam (704).

When the wavelength of both light beam are within the optical gain bandwidth of the upper slab waveguide layer (504)/ (104), as both light beams travel in the upper slab waveguide core layer (504)/ (104), the- carrier density in layer (504) changes because of the consumption of carriers through stimulated emission involved in the optical amplification process. Because the intensity of the first light beam is modulated by the data, the carrier density will also be modulated by the data signal.

This variation of carrier density results in varying optical gain and refractive index in layer (504).

Therefore the intensity of the output beam (704) can be changed by two mechanisms.

The first mechanism, by which the intensity of the output beam (704) is modulated by the data carried on

the first input light beam (701), is referred as cross- gain modulation. When the intensity of the first light beam (701) is high, more carriers are consumed by stimulated emission. The reduced carrier population results in reduced amplification of the second input light beam. The output light beam (704) will consequently have a lower intensity. On the contrary, when the intensity of the first input beam (701) is low, less carriers are consumed by stimulated emission. The higher carrier population corresponds to higher optical gain and more amplification of the second input light beam. Therefore the output light beam (704) will consequently have a higher intensity. The data modulating the first input light beam (701) is therefore transferred to the second output beam (704) with reversed polarity.

The second mechanism, by which the intensity of the output beam (704) is modulated by the data carried on the first input light beam (701), is the refractive index change caused by the carrier population variation. As described above, the strength of optical coupling between the upper and lower slab waveguide layers in the vertical coupler depends on the propagation constants of both slab waveguides being equal or very close. In the first preferred embodiment this condition is reached at a certain injected carrier density level set by a suitable positive bias voltage so that the second input beam (702) is routed to port (301) and exit as output beam (704). When the carrier population is reduced due to the high intensity of the first input beam (701), the strong coupling condition is removed, and the intensity of the output beam (704) is reduced.

It is obvious from the above description that the two mechanisms are both present and are not separable in the first preferred embodiment of the present invention. The two mechanisms are constructively superimposed. As a result, in the present invention, enhanced wavelength conversion performance is expected over prior arts where only one of the mechanisms (either cross gain modulation or refractive index change/cross phase modulation) are employed.

A second wavelength conversion mode (co-propagation) in the first particular embodiment of the present invention is illustrated in Fig. 8.

A first light beam (801) whose intensity is modulated by a data signal enters the router/wavelength converter component via port (301). The component that is the first preferred embodiment of the present invention is applied with a positive voltage between the p-side and n-side ohmic contacts (506) and (507). The resulting carrier population injected in the upper slab waveguide core layer (504) causes a change in refractive index and an optical gain. According to the above description, the component routes the first light beam (801) to port (302) to exit as output beam (803).

A second light beam (802) that has a wavelength different from the first light beam and that is constant in intensity enters the component also by way of port (301). According to the same principles described above, the second light beam travels exactly the same route as the first light beam, and exits the component via port (302) as output beam (804).

Wavelength conversion happens in the whole length of the vertical coupler section by the same principles and

mechanisms that are present in the first wavelength conversion mode.

A third wavelength conversion mode in the first particular embodiment of the present invention is illustrated in Fig. 9.

A first light beam (901) whose intensity is constant enters the router/wavelength converter component via port (301). The component that is the first preferred embodiment of the present invention is applied with a positive voltage between the p-side and n-side. ohmic contacts (506) and (507). The resulting carrier population injected in the upper slab waveguide core layer (504) causes a change in refractive index and an optical gain. According to the above description, the component routes the first light beam (901) to port (302) to exit as output beam (903).

A second light beam (902) that has a wavelength different from the first light beam and whose intensity is modulated by a data signal enters the component by way of port (303). According to the same principles described above, the second light beam travels in the lower slab waveguide layer (102)/ (502) towards port (301), and mostly couples into the upper slab waveguide in the first half of the vertical coupler section (204a).

Wavelength conversion happens in the first half of the vertical coupler section (205a) by the same principles and mechanisms that are present in the first wavelength conversion mode.

A fourth wavelength conversion mode in the first preferred embodiment of the present invention is

illustrated in Fig. 10.

A first light beam (1001) whose intensity is constant enters the router/wavelength converter component via port (301). The component that is the first preferred embodiment of the present invention is applied with a positive voltage between the p-side and n-side ohmic contacts (506) and (507). The resulting carrier population injected in the upper slab waveguide core layer (504) causes a change in refractive index and an optical gain. According to above descriptions, the component routes the first light beam (1001) to port (302) and exit as output beam (1003).

A second light beam (1002) that has a wavelength different from the first light beam and whose intensity is modulated by a data signal enters the component by way of port (304). According to the same principles described above, the second light beam travels in the lower slab waveguide layer (102)/ (502) towards port (302), and mostly couples into the upper slab waveguide layer (104)/ (504) in the second half of the vertical coupler section (205b).

Wavelength conversion happens in the second half of the vertical coupler section (205b) by the same principles and mechanisms that are present in the first wavelength conversion mode.

A fifth wavelength conversion mode in the first preferred embodiment of the present invention involves a process known as four wave mixing. A first light beam the has a intensity modulated by a data signal interact with a second light beam that has a constant intensity and a wavelength different from the first light beam.

As a result a third light beam is generated in the

component. This third light beam has a wavelength that is different from both the first and the second light beam. The intensity of the third light beam is modulated by the data signal that is carried by the first light beam.

By using current injection induced gain and refractive index as the control mechanism for routing, the first embodiment of the present invention has the advantage of providing: 1. Fast switching speed in nanosecond range.

2. Enhanced wavelength conversion by a combination of cross gain and refractive index (coupling) modulation.

3. Wavelength conversion by means of four wave mixing.

4. Optical gain for data being routed and wavelength converted.

5. Possibility of large scale integration due to the use of passive waveguides as interconnection between router/wavelength converter components.

6. Possibility of large scale integration also due to the use of non-splitting architecture. In the present invention the input light beam can be routed/wavelength converted in whole at a chosen component without being split into many parts. Better signal to noise ratio can be achieved in such an architecture.

A second preferred embodiment is described below.

A semiconductor wafer is prepared according to Fig. 6.

An n-type InP buffer layer (601) is first disposed on a

n+ InP substrate (600). An n-type InGaAsP layer (602) of appropriate bandgap energy, another InP layer (603), an undoped InGaAsP layer (604), and a third InP layer that is p-type doped are disposed successively on the buffer layer (601). Further layers may be necessary for contact purposes. Layer (602) acts as the core layer of the optically passive lower slab waveguide (102), and has a bandgap energy that is larger than the input light beam photon energy. Layer (604) acts as the optically active upper slab waveguide core layer (104).

The semiconductor layers are doped so that a p-i-n double hetero-junction structure is formed around the upper slab waveguide core layer.

The second preferred embodiment can be fabricated by the same preferred method that is given for the first preferred embodiment. Corresponding illustrations are presented in Fig. 3 (a), (b), (c), (d), (e), (f) and (g).

A description of the operational principle of the second preferred embodiment is given below. Related illustrations are presented in Fig. 4, Fig. 6, Fig. 7, and Fig. 8.

The semiconductor layer parameters are so designed that when an electric field is absent, the optical coupling between the lower slab waveguide core layer (602)/ (102) and the upper slab waveguide core layer (604)/ (104) is strong in the vertical coupler. This strong optical coupling results from the fact that the propagation constants of both slab waveguides are very close or equal. A significant optical power transfer happens between the said layers. The length of the vertical coupler section (205) is so designed that maximum

optical power transfer happens over the two parts of the vertical coupler section (205a) and (205b) on either side of the deflecting surface (206). The upper slab waveguide core layer (604) is also low absorption at the absence of the electric field because its bandgap energy is larger than the photon energy of the external light beam.

As a result, without the influence of the voltage that is applied between the p-side ohmic contact (606) and the n-side ohmic contact (607), the routing process illustrated in Fig. 4 (a) happens in the router/wavelength converter component. A light beam (401) entering port (301) is mostly coupled from the lower slab waveguide (102) to the upper slab waveguide (104) in the first section of the vertical coupler (205a), deflected by the vertical surface (206) into the second section of the vertical coupler (205b), and routed to port (302) by coupling from the upper slab waveguide (104) to the lower slab waveguide (102). The ridge waveguide of port (302) leads either to the next component in a integrated device matrix, or to the edge of the integrated device where the light beam leaves the device.

As illustrated in Fig. 4 (b) and Fig. 6, the semiconductor layer structure is designed so that when an negative electric voltage is applied between the p-side and the n+-side ohmic contacts, an electric field is applied across the upper slab waveguide layer (604). This electrical field shifts the bandgap of layer (604) so that it has a high optical absorption and a higher refractive index at the light signal wavelength, and the optical coupling between the lower slab waveguide

core layer (102) and the upper slab waveguide core layer (104) is weak. Therefore a input light beam (401) entering the lower slab waveguide via port (301) will mostly remain travelling in the lower slab waveguide and leave the router/wavelength converter component via port (303). The ridge waveguide of port (303) leads either to the next component in a integrated device matrix, or to the edge of the integrated device where the light beam leaves the device.

A first wavelength conversion mode (counter- propagation) in the second particular embodiment of the present invention is illustrated in Fig. 7.

A first light beam (701) whose intensity is constant enters the router/wavelength converter component via port (301). The component that is the second preferred embodiment of the present invention is applied with a negative voltage between the p-side and n-side ohmic contacts (606) and (607). According to above descriptions, the component routes the first light beam (701) to port (303).

A second light beam (703) that has a wavelength different from the first light beam and that is intensity modulated by a data signal enters the component by way of port (302). According to the same principles described above, the second light beam mostly remains in the lower slab waveguide and exits the component via port (304).

However, when the intensity of the second light beam is sufficiently high, the part of its energy that is absorbed by the upper waveguide core (604) through residual optical coupling starts to saturate the absorbing layer (604). As a result the effective

bandgap of layer (604) is widened, so that its refractive index reduces, resulting in increasing optical coupling between the two waveguide layers. This in turn increases the optical power of second light beam that is coupled into layer (604) and absorbed. A positive feedback cycle is therefore established until the increasing optical coupling into layer (604) and decreasing absorption in layer (604) reaches a balance.

At this point the stronger optical coupling and reduced absorption in layer (604) enables the first light beam to be routed to port (302) and exits as output beam (702). Because this output is only present when beam (703) is at high intensity, the data carried by input beam (703) is successfully transferred to output beam (702).

A second wavelength conversion mode (co-propagation) in the second particular embodiment of the present invention is illustrated in Fig. 8.

A first light beam (801) whose intensity is constant enters the router/wavelength converter component via port (301). The component that is the second preferred embodiment of the present invention is applied with a negative voltage between the p-side and n-side ohmic contacts (606) and (607). According to above descriptions, the component routes the first light beam (801) to port (303).

A second light beam (802) that has a wavelength different from the first light beam and that is intensity modulated by a data signal also enters the component by way of port (301). According to the same principles described above, the second light beam mostly remains in the lower slab waveguide and exits

the component via port (303).

However, when the intensity of the second light beam (802) is sufficiently high, the part of its energy that is absorbed by the upper waveguide core (604) through residual optical coupling starts to saturate the absorbing layer (604). As a result the effective bandgap of layer (604) is widened, so that its refractive index reduces, resulting in increasing optical coupling between the two waveguide layers. This in turn increases the optical power of second light beam (802) that is coupled into layer (604) and absorbed. A positive feedback cycle is therefore established until the increasing optical coupling into layer (604) and decreasing absorption in layer (604) reaches a balance. At this point the stronger optical coupling and reduced absorption in layer (604) enables the first light beam (801) to be routed to port (302) and exits as output beam (803). Because this output is only present when beam (802) is at high intensity, the data carried by input beam (802) is successfully transferred to output beam (803).

By using electric field induced bandgap change as the control mechanism for routing, the second embodiment of the present invention has the advantage of providing: 1. Very Fast switching speed in the sub-nanosecond range.

2. Enhanced wavelength conversion by a positive feedback of absorption and refractive index (coupling) modulation.

3. Possibility of large scale integration due to the use

of passive waveguides as interconnection between router/wavelength converter components.

4. Possibility of large scale integration also due to the use of non-splitting architecture.

It will be appreciated that an embodiment of the present invention provides an optical component that uses optically active vertical couplers to enable optical signals to be routed and wavelength converted at the same time.

An optical device can include a plurality of such components, that are optically connected and integrated on a single substrate, and that extend on the substrate to form a matrix of the optical component.

An optical device can include a plurality of such components that are connected to each other by means of other optical waveguides that are not part of the same substrate or wafer.

The component comprises two or more slab waveguide layers that are stacked vertically, and that are optically coupled to each other. One or more of the layers are optically active that can amplify or absorb external light signals that are to be routed and/or wavelength converted. Two ridge waveguides are fabricated in above slab waveguide layers, and that intersect each other.

A deflecting surface at the intersection deflects light from one ridge waveguide into the other ridge waveguide.

Such an optical component can have two optically coupled slab waveguides. A light amplifying. upper waveguide core layer and a low absorption optically

passive lower slab waveguide core layer can be provided.

Such an optical component may use a bulk semiconductor layer as the light amplifying layer and may use electric current injection to control the optical amplification.

Alternatively, such an optical component may use a single or multiple quantum well structure as the light amplifying layer and may use electric current injection to control the optical amplification.

Such an optical component may have a light absorbing upper waveguide core layer and may have a low absorption, optically passive, lower slab waveguide core layer.

A bulk semiconductor layer may be used as the lower slab waveguide core layer.

A multiple quantum well structure may provide the lower slab waveguide core layer.

Such an optical component may have two ridge waveguides that are normal to each other, or that are not normal to each other.

The deflecting surface may be flat, or cylindrical.

Another embodiment of the present invention can provide a self aligning method of fabricating'such an optical device and comprises: Deposition and a first patterning step of a first mask material on the wafer; Deposition and patterning of a second mask material, that is aligned properly to the first mask material on the wafer; A second patterning step of the first mask material using the second mask material as a mask.

A first etching step of the component wafer material; Removal of the second mask material; A second etching step of the component wafer material; Another embodiment of the present invention provides a method of wavelength conversion in such an optical component and/or integrated device where a data carrying light signal and a CW light signal enter the component/integrated device via a same port.

Another embodiment of the present invention provides a method of wavelength conversion in such an optical component and/or integrated device where a data carrying light signal enters the component/integrated device via a first port and leaves the component/integrated device via a second port, while a CW light signal enters the same component/integrated device via the second port and leaves the same component/integrated device via the first port.

Another method of wavelength conversion can be provided in such an optical component and/or integrated device where a data carrying light signal and a CW light signal enter the component/integrated device via separate respective ports.

Another method of wavelength conversion can be provided in such an optical component and/or integrated device where a data carrying light beam and a CW light beam interact in the optical component and/or integrated device to generated light beams of another wavelength that are modulated in intensity by the data carried by the first light beam.

The examples of the invention have been described using ridge waveguide structures. However, it will be readily appreciated that any waveguide structure is appropriate for use in embodiments of the invention.