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Title:
INTEGRATED SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2021/039629
Kind Code:
A1
Abstract:
This integrated semiconductor device comprises an Si substrate (1), and a high-side transistor and a low-side transistor which are integrated on the Si substrate (1) and constitute a half-bridge. A source electrode of a unit transistor (110) constituting the high-side transistor and a drain electrode of a unit transistor (100) constituting the low-side transistor are integrated as a common electrode (16).

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Inventors:
YANAGIHARA MANABU
SATO TAKAHIRO
YAMAGIWA HIROTO
HIKITA MASAHIRO
Application Number:
PCT/JP2020/031632
Publication Date:
March 04, 2021
Filing Date:
August 21, 2020
Export Citation:
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Assignee:
PANASONIC IP MAN CO LTD (JP)
International Classes:
H01L27/095; H01L21/337; H01L21/338; H01L27/098; H01L29/778; H01L29/808; H01L29/812; H02M3/28; H02M7/48
Domestic Patent References:
WO2014188651A12014-11-27
WO2013161138A12013-10-31
Foreign References:
JP2011182591A2011-09-15
Attorney, Agent or Firm:
NII, Hiromori et al. (JP)
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