Title:
INTEGRATED STRUCTURE OF AND INTEGRATED METHOD FOR CRYSTAL RESONATOR AND CONTROL CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2020/134601
Kind Code:
A1
Abstract:
An integrated structure of and an integrated method for a crystal resonator and a control circuit. A lower cavity (120) is formed in a device wafer (100) provided with a control circuit (110), and a piezoelectric resonator sheet (200) is provided on the frontal surface (100U) of the device wafer (100); and a capping layer (420) is formed by means of a semiconductor planar process to cap the piezoelectric resonator sheet (200) in an upper cavity (400) to constitute a resonator. In addition, a semiconductor chip (500) can further be bonded to the back surface (100D) of the same device wafer (100) to facilitate further improving the integration of the crystal resonator and to achieve the on-chip modulation of parameters of the crystal resonator, so that the crystal resonator has a smaller size, the power consumed by the crystal resonator is reduced, and the crystal resonator is also easier to integrate with other semiconductor devices, thereby improving the integration of devices.
Inventors:
QIN XIAOSHAN (CN)
Application Number:
PCT/CN2019/115651
Publication Date:
July 02, 2020
Filing Date:
November 05, 2019
Export Citation:
Assignee:
NINGBO SEMICONDUCTOR INT CORPORATION SHANGHAI BRANCH (CN)
International Classes:
H03H9/02
Foreign References:
| JPH05259739A | 1993-10-08 | |||
| CN102916671A | 2013-02-06 | |||
| CN101132169A | 2008-02-27 | |||
| CN202906852U | 2013-04-24 | |||
| CN201266912Y | 2009-07-01 | |||
| CN1237830A | 1999-12-08 |
Attorney, Agent or Firm:
SHANGHAI SAVVY IP AGENCY CO., LTD. (CN)
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