INTEGRATION OF LOW ELEMENT THIN FILMS AND Ta INTO Cu DAMASCENE

WIPO Patent Application WO2002069395

A3

New precursors and processes to generate fluorinated poly(para-xylylenes) ("PPX") and their chemically modified films suitable for fabrications of integrated circuit ("Ics") of <0.15 microm are disclosed. The films so prepared have low dielectric constants (" ELEMENT ") and are able to keep the integrity of the dielectric, Cu, and the barrier metal, such as Ta. Hence, the reliability of Ics can be assured.

LEE CHUNG J

PCT/US2002/005470

August 21, 2003

February 22, 2002

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DIELECTRIC SYSTEMS INC (US)

C08G61/02; C08J5/18; C08L65/00; C08L65/04; (IPC1-7): H01L21/768; C08G61/02; H01L21/312

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