Title:
INTERLAYER INSULATING LAYER FORMATION METHOD AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/011480
Kind Code:
A1
Abstract:
Provided are: an interlayer insulating layer formation method which enables the formation of an interlayer insulating layer having excellent mechanical strength and moisture absorption resistance and a low dielectric constant; and a semiconductor device having reduced wiring delay. A method for forming an interlayer insulating layer for a semiconductor device by a plasma CVD method comprises the steps of: installing a substrate to a treatment vessel having reduced pressure; supplying a plasma generation gas to a first space (1a) placed apart from the substrate; exciting the plasma generation gas in the first space (1a); and supplying a raw material gas comprising a boron compound having at least a hydrogen group or a hydrocarbon group to a second space (1b) formed between the first space (1a) and the substrate. A semiconductor device wherein multilayer interconnection is achieved through an interlayer insulating layer having an amorphous structure containing boron, carbon and nitrogen formed therein, and wherein a hydrocarbon group or an alkylamino group is allowed to co-exist in an amorphous structure containing hexagonal and cubic boron nitride in the interlayer insulating layer.
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Inventors:
MIYATANI, Kotaro (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
宮谷 光太郎 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
NEMOTO, Takenao (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
根本 剛直 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
KUROTORI, Takuya (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
宮谷 光太郎 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
NEMOTO, Takenao (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
根本 剛直 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
KUROTORI, Takuya (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
Application Number:
JP2011/066395
Publication Date:
January 26, 2012
Filing Date:
July 20, 2011
Export Citation:
Assignee:
TOKYO ELECTRON LIMITED (3-1 Akasaka 5-chome, Minato-ku Tokyo, 25, 〒1076325, JP)
東京エレクトロン株式会社 (〒25 東京都港区赤坂五丁目３番１号 Tokyo, 〒1076325, JP)
MIYATANI, Kotaro (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
宮谷 光太郎 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
NEMOTO, Takenao (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
根本 剛直 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
東京エレクトロン株式会社 (〒25 東京都港区赤坂五丁目３番１号 Tokyo, 〒1076325, JP)
MIYATANI, Kotaro (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
宮谷 光太郎 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
NEMOTO, Takenao (INC. 650 Mitsuzawa, Hosaka-cho, Nirasaki Cit, Yamanashi 92, 〒4070192, JP)
根本 剛直 (〒92 山梨県韮崎市穂坂町三ツ沢６５０ 東京エレクトロン技術研究所株式会社内 Yamanashi, 〒4070192, JP)
International Classes:
H01L21/318; C23C16/455; C23C16/511; H01L21/31; H01L21/768
Attorney, Agent or Firm:
KOHNO, Takao (KOHNO PATENT OFFICE, 4-3 Tsuriganecho 2-chome, Chuo-ku, Osaka-sh, Osaka 35, 〒5400035, JP)
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