Title:
ION BEAM ETCHING METHOD FOR MAGNETIC FILMS AND ION BEAM ETCHING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2013/065531
Kind Code:
A1
Abstract:
When a magnetic film on a substrate is etched by reactive ion beam etching during the production of a magnetic device, generation of particles and deterioration in process reproducibility, which are caused by a large amount of a carbon polymer that is produced at a plasma generation unit of an ion beam etching apparatus, are suppressed. In an ion beam etching apparatus, in addition to the introduction of a first carbon-containing gas into a plasma generation unit from a first gas introduction part, a second carbon-containing gas is separately introduced into a substrate processing space from a second gas introduction part, and reactive ion beam etching is performed. Consequently, a magnetic material is etched at a good etching rate with a good selectivity, while suppressing the formation of a carbon polymer at the plasma generation unit.
Inventors:
KODAIRA YOSHIMITSU (JP)
TOYOSATO TOMOHIKO (JP)
TOYOSATO TOMOHIKO (JP)
Application Number:
PCT/JP2012/077398
Publication Date:
May 10, 2013
Filing Date:
October 24, 2012
Export Citation:
Assignee:
CANON ANELVA CORP (JP)
International Classes:
C23F4/00; H01F10/16; H01F41/34; H01J37/305; H01L21/8246; H01L27/105; H01L43/08; H01L43/12; H05H1/46
Foreign References:
| JP2004356179A | 2004-12-16 | |||
| JPH08264519A | 1996-10-11 | |||
| JP2004281232A | 2004-10-07 | |||
| JP2002038285A | 2002-02-06 |
Attorney, Agent or Firm:
WATANABE Keisuke et al. (JP)
Keisuke Watanabe (JP)
Keisuke Watanabe (JP)
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Claims:
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