ION-BEAM GENERATING APPARATUS, AND SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING ELECTRONIC DEVICE USING SAME

WIPO Patent Application WO/2011/111343

A1

Provided is an ion-beam generating apparatus, wherein uniform substrate processing is made possible by dispersing ion beams pulled out from a plasma chamber, and reducing deviation in the directions of ion beams entering a substrate. Ion beams pulled out linearly from a discharge cell (2) by a pull-out electrode (7) are dispersed into a plurality of directions by a dispersion electrode (30) formed at the front side of the pull-out electrode (7), and made to enter a substrate (W) in an inclined state through a plurality of opening sections (66) formed on the dispersion electrode (30).

HIRAYANAGI, Hirohisa (5-1 Kurigi 2-chome, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
平柳　裕久 (〒50 神奈川県川崎市麻生区栗木２丁目５番１号　キヤノンアネルバ株式会社内 Kanagawa, 〒2158550, JP)
MIYOSHI, Ayumu (5-1 Kurigi 2-chome, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)

JP2011/001249

September 15, 2011

March 03, 2011

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CANON ANELVA CORPORATION (5-1 Kurigi 2-chome, Asao-ku Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
キヤノンアネルバ株式会社 (〒50 神奈川県川崎市麻生区栗木２丁目５番１号 Kanagawa, 〒2158550, JP)
HIRAYANAGI, Hirohisa (5-1 Kurigi 2-chome, Asao-ku, Kawasaki-sh, Kanagawa 50, 〒2158550, JP)
平柳　裕久 (〒50 神奈川県川崎市麻生区栗木２丁目５番１号　キヤノンアネルバ株式会社内 Kanagawa, 〒2158550, JP)

H01J37/08; G11B5/84; H01J27/02; H01L21/302

WATANABE, Keisuke et al. (6th Floor, Mitsui Sumitomo Ginko Okachimachi Bldg. 11-4, Taito 4-chome, Taito-k, Tokyo 16, 〒1100016, JP)

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