ION BEAM IRRADIATION APPARATUS AND ION BEAM IRRADIATION METHOD

WIPO Patent Application WO/2016/171262

A1

The purpose of the present invention is to enable irradiation of the whole surface of a substrate with an ion beam and to shorten the time period required for processing the substrate even when the substrate is scanned and rotated. This ion beam irradiation apparatus is provided with: a rotation mechanism (10) that rotates a holder (8) housed in a vacuum container (4), and a substrate (6) held thereby, about the central portions thereof; and a scanning mechanism (14) that mechanically scans the holder (8), the substrate (6), and the rotation mechanism (10). The ion beam irradiation apparatus is further provided with: an ion beam supply unit (18) that emits, with respect to the substrate (6) on the holder (8), an ion beam (28) of which the size at the location of the substrate (6) is larger than a dimension that includes the substrate (6) and an area in which the substrate (6) is to be scanned; and a control device (50) having a function of controlling the rotation mechanism (10) and the scanning mechanism (14) to rotate and scan the substrate (6) within the irradiation area of the ion beam (28), and irradiating the whole surface of the substrate (6) with the ion beam (28).

INAMI HIROSHI (JP)
MIKAMI TAKASHI (JP)
DAIMARU TOMOHIRO (JP)
NAGAMACHI SATORU (JP)

PCT/JP2016/062798

October 27, 2016

April 22, 2016

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NISSIN ELECTRIC CO LTD (JP)

H01J37/30; H01J37/305; H01J37/317

JPH08227685A	1996-09-03
JP2010109345A	2010-05-13
JP2010086824A	2010-04-15
JP2007207715A	2007-08-16

NISHIMURA, RYUHEI (JP)
Ryuhei Nishimura (JP)

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