ION BEAM SPUTTERING EQUIPMENT AND METHOD FOR FORMING MULTILAYER FILM FOR REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

Title:

ION BEAM SPUTTERING EQUIPMENT AND METHOD FOR FORMING MULTILAYER FILM FOR REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

Document Type and Number:

WIPO Patent Application WO/2006/049022

Kind Code:

A1

Abstract:

A method for forming a multilayer film for an EUV mask blank, by which defects due to mixing of particles in a film being formed is eliminated, and ion beam sputtering equipment suitable for such method. The method is provided for forming the multilayer film for the reflective mask blank for EUV lithography on a film forming substrate by using ion beam sputtering method. The method is characterized in that a sputtering target and the film forming substrate are arranged to face each other at a prescribed interval, and ion beams are permitted to enter the sputtering target from an ion source arranged at a position outside a region where particles can linearly move in a direction toward the sputtering target from the film forming substrate.

Inventors:

SUGIYAMA TAKASHI (JP)
UNO TOSHIYUKI (JP)
TAKAKI SATORU (JP)

Application Number:

PCT/JP2005/019406

Publication Date:

May 11, 2006

Filing Date:

October 21, 2005

Export Citation:

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Assignee:

ASAHI GLASS CO LTD (JP)
SUGIYAMA TAKASHI (JP)
UNO TOSHIYUKI (JP)
TAKAKI SATORU (JP)

International Classes:

C23C14/46; C23C14/34; G03F1/24; H01L21/027; H01L21/285

Foreign References:

JPH10287973A	1998-10-27
JPH0790579A	1995-04-04
JP2000178731A	2000-06-27
JPH08127869A	1996-05-21
JP2002216653A	2002-08-02
JPH0881771A	1996-03-26

Other References: