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Patent Searching and Data


Title:
ION IMPLANTATION WITH HEAVY HALOGENIDE COMPOUNDS
Document Type and Number:
WIPO Patent Application WO/2010/011711
Kind Code:
A3
Abstract:
A method of plasma doping includes providing a dopant gas comprising a dopant heavy halogenide compound gas to a plasma chamber. A plasma is formed in the plasma chamber with the dopant heavy haiogenide compound gas and generates desired dopant ions and heavy fragments of precurssor dopant molecule. A substrate in the plasma chamber is biased so that the desired dopant ions impact the substrate with a desired ion energy, thereby implanting the desired dopant ions and the heavy fragments of precurssor dopant molecule into the substrate, wherein at least one of the ion energy and composition of the dopant heavy halogenide compound is chosen so that the implant profile in the substrate is substantially determined by the desired dopant ions.

Inventors:
GODET LUDOVIC (US)
PAPASOULIOTIS GEORGE D (US)
AREVALO EDWIN A (US)
Application Number:
PCT/US2009/051348
Publication Date:
April 08, 2010
Filing Date:
July 22, 2009
Export Citation:
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Assignee:
VARIAN SEMICONDUCTOR EQUIPMENT (US)
GODET LUDOVIC (US)
PAPASOULIOTIS GEORGE D (US)
AREVALO EDWIN A (US)
International Classes:
H01L21/265
Foreign References:
US7037813B22006-05-02
US20060063361A12006-03-23
US20020028349A12002-03-07
Attorney, Agent or Firm:
FABER, Scott, R. (Associates Inc.,35 Dory Roa, Gloucester MA, US)
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