ION SOURCE FILAMENT STRUCTURE, ION SOURCE DEVICE AND ION IMPLANTATION APPARATUS

WIPO Patent Application WO/2024/050878

A1

Provided are an ion source filament structure, an ion source device and an ion implantation apparatus. The ion source filament structure comprises a filament (10), a feed connection rod (20) and a clamping component (30). The filament (10) comprises a body (11) and a mounting terminal (12). The feed connection rod (20) comprises a main body portion (21) and a connecting portion (22) having a mounting hole (221) therein, wherein the connecting portion (22) is arranged at one end of the main body portion (21) in the lengthwise direction of the main body portion, and the other end of the main body portion (21) in the lengthwise direction of the main body portion is connected to a power supply. The clamping component (30) is arranged in the mounting hole (221), the clamping component (30) is of a sleeve-shaped structure, and the clamping component (30) comprises an elastic structure section (31) and fixed sections (32), wherein the fixed sections (32) are arranged at two ends of the elastic structure section (31) in the lengthwise direction of the elastic structure section, the elastic structure section (31) has a radial deformation amount, and the elastic structure section (31) is connected to the mounting terminal (12) in an inserted manner and provides a clamping force for the mounting terminal (12).

DU JIANMIN (CN)
SHAO WEI (CN)
SHAO HAO (CN)
SONG WENBO (CN)

PCT/CN2022/120908

March 14, 2024

September 23, 2022

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TAIWAN SEMICONDUCTOR MFG CO LTD (CN)
TSMC CHINA COMPANY LTD (CN)

H01J37/08; H01J37/317

CN205211697U	2016-05-04
CN208923421U	2019-05-31
CN114156150A	2022-03-08
CN105355531A	2016-02-24
US6204508B1	2001-03-20

BEIJING EAST IP LTD. (CN)

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