Title:
IRON SILICIDE SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF
Document Type and Number:
WIPO Patent Application WO/2004/024977
Kind Code:
A1
Abstract:
An iron silicide sputtering target, characterized in that it contains oxygen, which is a gas forming component present in the target, in an amount of 1000 ppm or less; and a method for producing the iron silicide sputtering target, which comprises melting high purity iron and silicon under high vacuum, followed by casting, to prepare an alloy ingot, subjecting the ingot to gas atomizing, to prepare a fine powder, and sintering the fine powder. The sputtering target is reduced in the amount of impurities, allows the formation of a thick film of βFeSi2 in film forming, exhibits good sputtering characteristics, and can provide a film having a reduced number of particles and exhibits a good uniformity and a homogeneous film composition. The method can be used for stably producing said target.
Inventors:
ODA KUNIHIRO (JP)
SUZUKI RYO (JP)
SUZUKI RYO (JP)
Application Number:
PCT/JP2003/011152
Publication Date:
March 25, 2004
Filing Date:
September 01, 2003
Export Citation:
Assignee:
NIKKO MATERIALS CO LTD (JP)
ODA KUNIHIRO (JP)
SUZUKI RYO (JP)
ODA KUNIHIRO (JP)
SUZUKI RYO (JP)
International Classes:
B22F9/08; B22F1/00; B22F3/105; B22F3/14; B22F3/15; C01B33/06; C04B35/645; C22C33/02; C22C38/00; C23C14/34; (IPC1-7): C23C14/34; C01B33/06; C04B35/58
Foreign References:
| JP2000178713A | 2000-06-27 | |||
| JPH10110264A | 1998-04-28 | |||
| JPS63227771A | 1988-09-22 | |||
| JPS63238265A | 1988-10-04 | |||
| JPH10259432A | 1998-09-29 | |||
| JPH08104981A | 1996-04-23 | |||
| JPH05125523A | 1993-05-21 |
Other References:
See also references of EP 1548148A4
Attorney, Agent or Firm:
Ogoshi, Isamu (Toranomon 9 Mori Bldg. 3F 2-2, Atago 1-chom, Minato-ku Tokyo, JP)
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