Title:
JOINED BODY CONSTITUTED OF PIEZOELECTRIC MATERIAL SUBSTRATE AND SUPPORT SUBSTRATE, METHOD OF MANUFACTURING SAME, AND ELASTIC WAVE ELEMENT
Document Type and Number:
WIPO Patent Application WO/2020/095924
Kind Code:
A1
Abstract:
[Problem] To prevent the breakage and cracking of a joined body obtained by joining a piezoelectric material substrate and a silicon substrate via a joining layer comprising silicon oxide, while also improving the effective resistivity thereof over a wide frequency range. [Solution] A silicon film 2 is provided on a silicon support substrate 1 by sputtering. The silicon film 2 is heat-treated at a temperature of 400°C to 600°C to form an intermediate layer 3. A piezoelectric material substrate is joined to the support substrate 1 via the intermediate layer 3 and a joining layer comprising silicon oxide.
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Inventors:
HORI YUJI (JP)
YAMADERA TAKAHIRO (JP)
YAMADERA TAKAHIRO (JP)
Application Number:
PCT/JP2019/043392
Publication Date:
May 14, 2020
Filing Date:
November 06, 2019
Export Citation:
Assignee:
NGK INSULATORS LTD (JP)
International Classes:
H03H3/08; H01L41/187; H03H9/25
Domestic Patent References:
| WO2018016169A1 | 2018-01-25 | |||
| WO2018180827A1 | 2018-10-04 | |||
| WO2017163722A1 | 2017-09-28 |
Foreign References:
| JP2011061269A | 2011-03-24 | |||
| US20170063332A1 | 2017-03-02 |
Other References:
"Impact of Si substrate resistivity on the non-linear behavior of RF CPW transmission lines", PROCEEDINGS OF THE 3RD EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, pages 36 - 39
"Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon", IEEE MICROWAVE AND GUIDED WAVE LETTERS, vol. 9, no. 10, October 1999 (1999-10-01), pages 395 - 397
"A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs", IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 3, March 2011 (2011-03-01), pages 369 - 371
I. H. P. SAW TECHNOLOGY AND ITS APPLICATION TO MICROACOUSTIC COMPOUNDS (INVITED), PROCEEDINGS OF IUS, 2017
See also references of EP 3713085A4
"Low-Loss CPW Lines on surface Stabilized High-Resistivity Silicon", IEEE MICROWAVE AND GUIDED WAVE LETTERS, vol. 9, no. 10, October 1999 (1999-10-01), pages 395 - 397
"A Nanocrystalline Silicon Surface-Passivation Layer on an HR-Si Substrate for RFICs", IEEE ELECTRON DEVICE LETTERS, vol. 32, no. 3, March 2011 (2011-03-01), pages 369 - 371
I. H. P. SAW TECHNOLOGY AND ITS APPLICATION TO MICROACOUSTIC COMPOUNDS (INVITED), PROCEEDINGS OF IUS, 2017
See also references of EP 3713085A4
Attorney, Agent or Firm:
HOSODA Masutoshi et al. (JP)
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