JOINING STRUCTURE AND SEMICONDUCTOR DEVICE

Title:

JOINING STRUCTURE AND SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2024/075514

Kind Code:

A1

Abstract:

This joining structure comprises a first joining target that has a first joining layer, a second joining target that has a second joining layer, and an intermediate joining material that is between the first joining target and the second joining target. The intermediate joining material has a base material layer and a first surface layer and second surface layer that are disposed on either side of the base material layer. The first joining layer and the first surface layer are joined by solid phase bonding. The second joining layer and the second surface layer are joined by solid phase bonding. The main component of the base material layer is Cu.

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Inventors:

SATO OJI (JP)
YASUNISHI TOMOHIRO (JP)
SHIMIZU TETSUYA (JP)

Application Number:

PCT/JP2023/033925

Publication Date:

April 11, 2024

Filing Date:

September 19, 2023

Export Citation:

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Assignee:

ROHM CO LTD (JP)

International Classes:

H01L23/40; B23K20/00; H01L21/52

Attorney, Agent or Firm:

USUI Takashi et al. (JP)

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