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Patent Searching and Data


Title:
LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM
Document Type and Number:
WIPO Patent Application WO/2005/042247
Kind Code:
A1
Abstract:
A laminate which comprises a first silica-based film, a second silica-based film and an organic film, wherein the second silica-based film has a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond; a method for forming the above laminate which comprises forming a first coating film for the first silica-based film on a substrate, forming a second coating film having a mono-valent organic group containing a carbon-carbon double bond or a carbon-carbon triple bond for the second silica-based film on the first coating film, forming a third coating film for the organic film on the second coating film, and then curing a laminated film comprising the above first to third coating films; an insulating film; a semiconductor device; and a composition for forming the film. The above laminate has a low dielectric constant, and also is excellent in the adhesiveness between the films.

Inventors:
AKIYAMA MASAHIRO (JP)
HATTORI SEITARO (JP)
KUROSAWA TAKAHIKO (JP)
SEKIGUCHI MANABU (JP)
KOKUBO TERUKAZU (JP)
MITA MICHIHIRO (JP)
YAMANAKA TATSUYA (JP)
OBI MASAKI (JP)
Application Number:
PCT/JP2004/016110
Publication Date:
May 12, 2005
Filing Date:
October 29, 2004
Export Citation:
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Assignee:
JSR CORP (JP)
AKIYAMA MASAHIRO (JP)
HATTORI SEITARO (JP)
KUROSAWA TAKAHIKO (JP)
SEKIGUCHI MANABU (JP)
KOKUBO TERUKAZU (JP)
MITA MICHIHIRO (JP)
YAMANAKA TATSUYA (JP)
OBI MASAKI (JP)
International Classes:
C09D183/14; H01L21/312; H01L21/768; (IPC1-7): B32B27/00; C09D183/14; H01L21/312
Foreign References:
JPH0952320A1997-02-25
JP2002038091A2002-02-06
JP2002009066A2002-01-11
JP2002038081A2002-02-06
JPH0952320A1997-02-25
JP2002038091A2002-02-06
JP2002009066A2002-01-11
Other References:
See also references of EP 1679184A4
Attorney, Agent or Firm:
Ofuchi, Michie (Ogikubo TM Bldg. 26-13, Ogikubo 5-chome, Suginami-k, Tokyo 51, JP)
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