Title:
LAMINATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2023/058706
Kind Code:
A1
Abstract:
The present invention aims to provide at least either: a laminate comprising a silicon substrate that comprises a gallium nitride that has higher crystallinity than a laminate comprising a silicon substrate comprising conventional gallium nitride; a manufacturing method therefor; a semiconductor element comprising same; or an electronic device comprising the semiconductor element. This laminate is characterized by having a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated. The laminate is ideally obtained by a production method for a laminate that is characterized by having a structure in which a Si (111) substrate, an oxygen-containing aluminum nitride film, and a gallium nitride film are laminated, said production method having: an AlN film-formation step in which an aluminum nitride film is formed on the Si (111) substrate and an Si substrate comprising an aluminum nitride film is obtained; an oxidation step in which the Si substrate comprising the aluminum nitride film is treated in an oxidizing atmosphere and a Si substrate comprising an oxygen-containing aluminum nitride film is obtained; and a GaN film-formation step in which a gallium nitride film is formed on the Si substrate comprising the oxygen-containing aluminum nitride film.
Inventors:
SUEMOTO YUYA (JP)
UEOKA YOSHIHIRO (JP)
MESUDA MASAMI (JP)
NAGATA TAKAHIRO (JP)
SANG LIWEN (JP)
CHIKYOW TOYOHIRO (JP)
UEOKA YOSHIHIRO (JP)
MESUDA MASAMI (JP)
NAGATA TAKAHIRO (JP)
SANG LIWEN (JP)
CHIKYOW TOYOHIRO (JP)
Application Number:
PCT/JP2022/037383
Publication Date:
April 13, 2023
Filing Date:
October 06, 2022
Export Citation:
Assignee:
TOSOH CORP (JP)
NAT INST MATERIALS SCIENCE (JP)
NAT INST MATERIALS SCIENCE (JP)
International Classes:
B32B18/00; C23C14/06; H01L21/20; H01L21/203
Foreign References:
| US8623747B1 | 2014-01-07 | |||
| JP2016515299A | 2016-05-26 | |||
| KR20050088664A | 2005-09-07 |
Other References:
NAGATA TAKAHIRO, SUEMOTO YUYA, UEOKA YOSHIHIRO, MESUDA MASAMI, SANG LIWEN, CHIKYOW TOYOHIRO: "Effects of low temperature buffer layer on all-sputtered epitaxial GaN/AlN film on Si (111) substrate", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, vol. 60, no. SC, 1 June 2021 (2021-06-01), JP , pages SCCG03, XP093055624, ISSN: 0021-4922, DOI: 10.35848/1347-4065/abf07f
Attorney, Agent or Firm:
SEKIGUCHI Masao et al. (JP)
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