Title:
LAMINATE, METHOD FOR PRODUCING SAME, AND FUNCTIONAL ELEMENT USING SAME
Document Type and Number:
WIPO Patent Application WO/2011/108552
Kind Code:
A1
Abstract:
Disclosed is a laminate which comprises a transparent conductive film layer that is composed of an oxide thin film which is mainly composed of titanium oxide and contains an additional element such as niobium. The transparent conductive film layer contains an anatase phase having more excellent crystallinity and has high refractive index and low resistivity due to an optimal buffer layer that is formed on the substrate. Also disclosed are: a semiconductor light emitting element which comprises the laminate; and a functional element such as a solar cell, which comprises the laminate. Specifically disclosed is a laminate which is characterized in that: a buffer layer, which is composed of one or more thin films selected from among a gallium oxide thin film, an oxide thin film composed of gallium, indium and oxygen, and an oxide thin film composed of gallium, indium, aluminum and oxygen, is formed on a substrate; and a transparent conductive film layer that is composed of an oxide thin film, which is mainly composed of titanium oxide and contains one or more elements selected from among niobium, tantalum, molybdenum, arsenic, antimony and tungsten, is formed on the buffer layer.
Inventors:
CHICHIBU SHIGEFUSA (JP)
HAZU KOUJI (JP)
NAKAYAMA TOKUYUKI (JP)
TANAKA AKIKAZU (JP)
HAZU KOUJI (JP)
NAKAYAMA TOKUYUKI (JP)
TANAKA AKIKAZU (JP)
Application Number:
PCT/JP2011/054659
Publication Date:
September 09, 2011
Filing Date:
March 01, 2011
Export Citation:
Assignee:
SUMITOMO METAL MINING CO (JP)
UNIV TOHOKU (JP)
CHICHIBU SHIGEFUSA (JP)
HAZU KOUJI (JP)
NAKAYAMA TOKUYUKI (JP)
TANAKA AKIKAZU (JP)
UNIV TOHOKU (JP)
CHICHIBU SHIGEFUSA (JP)
HAZU KOUJI (JP)
NAKAYAMA TOKUYUKI (JP)
TANAKA AKIKAZU (JP)
International Classes:
B32B9/00; C23C14/06; H01B5/14; H01B13/00; H01L31/04; H01L33/32; H01L33/42
Domestic Patent References:
| WO2006016608A1 | 2006-02-16 |
Foreign References:
| JP2006228754A | 2006-08-31 | |||
| JPH1034798A | 1998-02-10 | |||
| JP2007210823A | 2007-08-23 | |||
| JP2006324512A | 2006-11-30 | |||
| JP2006016608A | 2006-01-19 | |||
| JP2008050677A | 2008-03-06 | |||
| JP2008084824A | 2008-04-10 | |||
| JP2009231213A | 2009-10-08 | |||
| JP2006073189A | 2006-03-16 | |||
| JP2008294306A | 2008-12-04 | |||
| JP2002329669A | 2002-11-15 |
Other References:
"Ta-doped Anatase Ti02 Epitaxial Film as Transparent Conducting Oxide", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 44, 2005, pages L1063 - L1065
"Heteroepitaxial Growth of Rutile Ti02 on GaN (0001) by Pulsed Laser Deposition", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 44, 2005, pages L1503 - L1505
"Heteroepitaxial Growth of Rutile Ti02 on GaN (0001) by Pulsed Laser Deposition", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 44, 2005, pages L1503 - L1505
Attorney, Agent or Firm:
OSHIDA Yoshitaka (JP)
Yoshitaka Oshida (JP)
Yoshitaka Oshida (JP)
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Claims: