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Title:
LARGE-CURRENT READOUT FERROELECTRIC SINGLE CRYSTAL THIN FILM MEMORY, AND PREPARATION METHOD AND OPERATING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2017/177376
Kind Code:
A1
Abstract:
A non-destructive large-current readout ferroelectric single crystal thin film memory, and a preparation method and operating method therefor, wherein same fall within the technical field of ferroelectric storage. A ferroelectric thin film layer (105) used in the non-destructive large-current readout ferroelectric single crystal thin film memory is a ferroelectric single crystal thin film layer, so that a read current in an ON state is greatly increased, and the data retention characteristic and the data persistence characteristic of same are improved.

Inventors:
JIANG ANQUAN (CN)
GENG WENPING (CN)
Application Number:
PCT/CN2016/079068
Publication Date:
October 19, 2017
Filing Date:
April 12, 2016
Export Citation:
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Assignee:
UNIV FUDAN (CN)
International Classes:
G11C11/22; H01L27/115
Foreign References:
CN104637948A2015-05-20
US20060018599A12006-01-26
CN104637949A2015-05-20
US20140312385A12014-10-23
CN105655342A2016-06-08
CN102787356A2012-11-21
Attorney, Agent or Firm:
CHINA PATENT AGENT (HK) LTD. (CN)
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