Title:
LARGE-SIZED SAPPHIRE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2016/208603
Kind Code:
A1
Abstract:
[Problem] To provide a large-sized single-crystal sapphire 6 or 8 inches in width, the crystal orientation of which can be measured by parallel light such as a general-purpose laser immediately after growth. [Solution] In the present invention, by growing a single-crystal sapphire ribbon having a surface in which the deviation of C-plane or R-plane crystal orientation is 2° or less with respect to the surface of a single-crystal sapphire ribbon grown by an EFG method, it is possible to obtain a single-crystal sapphire ribbon whereby the crystal orientation can be measured from the reflection angle when a general-purpose laser incident from a direction orthogonal to the surface is reflected.
Inventors:
KOTAKI TOSHIRO (JP)
Application Number:
PCT/JP2016/068446
Publication Date:
December 29, 2016
Filing Date:
June 22, 2016
Export Citation:
Assignee:
NAMIKI PRECISION JEWEL CO LTD (JP)
International Classes:
C30B29/20; C30B15/34
Foreign References:
| JP2011504451A | 2011-02-10 | |||
| JP2003327495A | 2003-11-19 | |||
| JP2015120612A | 2015-07-02 | |||
| JP2015124096A | 2015-07-06 |
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