Title:
LARGE-SURFACE-AREA SINGLE-CRYSTAL MONOLAYER GRAPHENE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2014/189271
Kind Code:
A1
Abstract:
The present invention relates to: large-surface-area single-crystal monolayer graphene in which a graphene layer is formed on a single-crystal metal catalyst layer oriented only in the (111) crystal plane, on a substrate or without a substrate; and a method for producing large-surface-area single-crystal monolayer graphene oriented only in the (111) crystal plane, by means of a heat treatment of a metal precursor and chemical vapour deposition. According to the present invention, a single-crystal metal catalyst layer oriented only in the (111) crystal plane can be formed, on a substrate or even without a substrate, in various modes of foil, flat plate, block or tube, and, by producing large-surface-area single-crystal monolayer graphene in which a graphene layer is formed on the catalyst layer, it is possible to commercialise high-quality large-surface-area graphene thin films by means of volume production, and it is possible to use the invention as a transparent electrode material and a material for display elements, semiconductor elements, separating films, fuel cells, solar cells or various types of sensor.
Inventors:
PARK HO BUM (KR)
KIM HANSU (KR)
YOON HEE WOOK (KR)
PARK SUN MI (KR)
LEE MIN YONG (KR)
KIM HANSU (KR)
YOON HEE WOOK (KR)
PARK SUN MI (KR)
LEE MIN YONG (KR)
Application Number:
PCT/KR2014/004517
Publication Date:
November 27, 2014
Filing Date:
May 21, 2014
Export Citation:
Assignee:
IUCF HYU (KR)
International Classes:
C23C16/22; C23C16/44; C23C28/00
Foreign References:
| US20100021708A1 | 2010-01-28 | |||
| KR20130020351A | 2013-02-27 | |||
| KR20130000964A | 2013-01-03 | |||
| US20120196074A1 | 2012-08-02 | |||
| EP2540862A1 | 2013-01-02 |
Attorney, Agent or Firm:
CHUNG HYUN PATENT & LAW FIRM (KR)
특허법인 충현 (KR)
특허법인 충현 (KR)
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