Title:
LASER ANNEALING DEVICE AND LASER ANNEALING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/004903
Kind Code:
A1
Abstract:
Provided is a pulsed laser annealing device that allows greater margins in pulsed energy density when annealing semiconductor films by projecting pulsed laser light thereon, without increasing the appropriate pulsed energy density. The pulsed laser annealing device comprises a laser light source that outputs a pulsed laser light, an optical assembly that shapes and guides the pulsed laser light to a semiconductor film to be processed, and a stage whereupon the semiconductor film to which the pulsed laser light is projected is mounted. The pulsed laser light that is projected on the semiconductor film is set so that the rising time for the pulsed energy density to reach the maximum from 10% of the maximum is less than or equal to 35ns, and the falling time for the pulsed energy to reach 10% of the maximum from the maximum is greater than or equal to 80ns. Thus, the device carries out quality annealing, increasing the margin without significantly increasing the pulsed energy density that is appropriate to crystallization, and without causing declines in throughput.
Inventors:
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
MACHIDA MASASHI (JP)
CHUNG SUGHWAN (JP)
MACHIDA MASASHI (JP)
Application Number:
PCT/JP2010/066178
Publication Date:
January 12, 2012
Filing Date:
September 17, 2010
Export Citation:
Assignee:
JAPAN STEEL WORKS LTD (JP)
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
MACHIDA MASASHI (JP)
SHIDA JUNICHI (JP)
CHUNG SUGHWAN (JP)
MACHIDA MASASHI (JP)
International Classes:
B23K26/00; H01L21/20; B23K26/352; H01L21/268; H01S3/00
Foreign References:
| JP2002541679A | 2002-12-03 | |||
| JPH09161264A | 1997-06-20 | |||
| JP2003273040A | 2003-09-26 | |||
| JP2002176006A | 2002-06-21 |
Attorney, Agent or Firm:
YOKOI Koki (JP)
Koki Yokoi (JP)
Koki Yokoi (JP)
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Claims: