LASER ANNEALING METHOD AND DEVICE

WIPO Patent Application WO/2011/148788

A1

Disclosed are a laser annealing method and device capable of applying sufficient energy to an amorphous silicon film and efficiently causing a phase change therein when laser annealing the amorphous silicon layer and forming a low temperature polysilicon film, even when using an inexpensive laser light source device such as a YAG laser. A fundamental wave from a YAG light source (11) is converted with wavelength converters (12, 13) into a second harmonic and a third harmonic, and the third harmonic laser light is beamed upon a body to be beamed (18), while the fundamental wave is beamed upon the body to be beamed (18) at delays of approximately 10ns and 20ns, via an approximately 3m third optical assembly (21) and an approximately 6m fourth optical assembly (22). The fused part of the amorphous silicon film that is fused with the third harmonic is thus beamed by the fundamental wave being segmented into a P wave and an S wave, and the YAG fundamental wave, which is not absorbed by the amorphous silicon film, is absorbed by the fused silicon, and is efficaciously used in the heating thereof.

KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)
HAMANO KUNIYUKI (JP)

PCT/JP2011/060875

December 01, 2011

May 11, 2011

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V TECHNOLOGY CO LTD (JP)
KAJIYAMA KOICHI (JP)
MIZUMURA MICHINOBU (JP)
HAMANO KUNIYUKI (JP)

H01L21/20; H01L21/268

JP2001044120A	2001-02-16
JPH06291034A	1994-10-18
JPS5629323A	1981-03-24
JPH0531354A	1993-02-09

FUJIMAKI, MASANORI (JP)
Masanori Fujimaki (JP)

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