Title:
LASER BEAM MACHINING METHOD AND SEMICONDUCTOR CHIP
Document Type and Number:
WIPO Patent Application WO/2007/074823
Kind Code:
A1
Abstract:
A focusing point P is adjusted to the inside of a substrate (4) of a working object
(1) comprising a substrate (4) and a plurality of functional elements (15) provided
on a surface (3) of the substrate (4). A laser beam L is applied to the working object
(1) to form, with respect to one predetermined cutting line (5), at least one row
of dividing modification region (72), at least one row of quality modification
region (71) located between the dividing modification region (72) and the surface
(3) of the substrate (4), and at least one row of HC modification region (73) located
between the dividing modification region (72) and the substrate (4) in its backside
(21). In this case, in the direction along the predetermined cutting line, the
formation density of the dividing modification region (72) is rendered lower
than the formation density of the quality modification region (71) and the formation
density of the HC modification region (73).
Inventors:
SAKAMOTO TAKESHI (JP)
MURAMATSU KENICHI (JP)
MURAMATSU KENICHI (JP)
Application Number:
PCT/JP2006/325919
Publication Date:
July 05, 2007
Filing Date:
December 26, 2006
Export Citation:
Assignee:
HAMAMATSU PHOTONICS KK (JP)
SAKAMOTO TAKESHI (JP)
MURAMATSU KENICHI (JP)
SAKAMOTO TAKESHI (JP)
MURAMATSU KENICHI (JP)
International Classes:
H01L21/301; B23K26/38; B23K26/40; B28D5/00; B23K101/40
Domestic Patent References:
| WO2005098915A1 | 2005-10-20 | |||
| WO2004051721A1 | 2004-06-17 | |||
| WO2003076119A1 | 2003-09-18 |
Foreign References:
| JP2003001473A | 2003-01-08 |
Other References:
See also references of EP 1983557A4
Attorney, Agent or Firm:
HASEGAWA, Yoshiki et al. (Ginza First Bldg. 10-6, Ginza 1-chome, Chuo-k, Tokyo 61, JP)
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