Title:
LASER DRILLING OF VIAS IN BACK CONTACT SOLAR CELLS
Document Type and Number:
WIPO Patent Application WO/2011/035153
Kind Code:
A3
Abstract:
Embodiments of the invention relate to methods and apparatus for laser drilling holes in a silicon substrate during the fabrication of back contact solar cells, such as emitter-wrap-through (EWT) solar cells. In one embodiment, the method and apparatus use a short focal length flat field lens and a dynamic scanning technique to accomplish single pulse drilling in the silicon substrate. The method and apparatus result in increased speed and quality of holes in an EWT solar cell substrate as compared to conventional apparatus and processes.
Inventors:
FRANKLIN JEFF (US)
GEE JAMES M (US)
GEE JAMES M (US)
Application Number:
PCT/US2010/049329
Publication Date:
July 28, 2011
Filing Date:
September 17, 2010
Export Citation:
Assignee:
APPLIED MATERIALS INC (US)
FRANKLIN JEFF (US)
GEE JAMES M (US)
FRANKLIN JEFF (US)
GEE JAMES M (US)
International Classes:
H01L31/18; B23K26/36; H01L31/042
Domestic Patent References:
| WO1998027450A1 | 1998-06-25 | |||
| WO1999045440A1 | 1999-09-10 |
Foreign References:
| US20040137731A1 | 2004-07-15 | |||
| KR100686806B1 | 2007-02-26 | |||
| US20060160332A1 | 2006-07-20 |
Attorney, Agent or Firm:
PATTERSON, B. Todd et al. (L.L.P.3040 Post Oak Blvd., Suite 150, Houston Texas, US)
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